JANSU 2N3019S-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package

  • This transistor enables efficient current amplification, improving signal control in electronic circuits.
  • It operates with a voltage rating suitable for moderate power applications, ensuring stable performance under load.
  • The compact package design supports space-saving layouts on printed circuit boards, facilitating dense component placement.
  • Ideal for switching and amplification in consumer electronics, it enhances device responsiveness and energy efficiency.
  • Manufactured following stringent quality protocols, it offers reliable operation over extended use periods.
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产品上方询盘

JANSU2N3019S-Transistor Overview

The JANSU2N3019S is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial and electronic circuits. With a robust collector current capacity and voltage rating, it offers reliable operation under demanding conditions. This transistor supports moderate power handling and features a complementary balance of gain and switching speed, making it suitable for a variety of signal processing and control tasks. Engineered for durability and consistency, it is a preferred choice for engineers seeking dependable transistor solutions. For detailed sourcing and specifications, visit IC Manufacturer.

JANSU2N3019S-Transistor Key Features

  • High Collector Current Capability: Supports up to 800mA, enabling efficient handling of moderate loads in switching circuits.
  • Collector-Emitter Voltage: Rated for 60V, ensuring reliable operation in medium voltage applications without breakdown.
  • Moderate Power Dissipation: Handles up to 625mW, providing a balance between power efficiency and thermal management.
  • Current Gain (hFE) Range: Offers gain between 40 to 320, allowing flexible amplification control across different circuit designs.

JANSU2N3019S-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 800 mA
Power Dissipation (PC) 625 mW
DC Current Gain (hFE) 40 – 320 ??
Transition Frequency (fT) 70 MHz
Package Type TO-18 Metal Can ??

JANSU2N3019S-Transistor Advantages vs Typical Alternatives

This transistor offers a strong combination of voltage tolerance and current capacity, making it highly reliable compared to typical alternatives. Its wide gain range and moderate power dissipation improve circuit efficiency and thermal stability. The metal TO-18 package enhances durability and heat dissipation, benefiting long-term reliability in industrial applications. These factors contribute to improved switching accuracy and consistent performance in demanding electronic environments.

Typical Applications

  • Switching circuits requiring moderate power handling and voltage ratings, such as relay drivers and power amplifiers, where reliable current control is essential for industrial automation.
  • Signal amplification in audio and instrumentation systems, leveraging its favorable gain characteristics for clear and stable signal processing.
  • General-purpose amplification in control circuits that demand a balance between speed and power efficiency.
  • Driver stages in power supply regulation circuits, benefiting from its voltage and current capabilities to maintain stable output.

JANSU2N3019S-Transistor Brand Info

The JANSU2N3019S transistor is a specialized product offered by a trusted semiconductor manufacturer known for delivering quality components tailored for industrial and commercial electronics. This transistor is engineered to meet stringent performance and reliability standards, supporting diverse applications from switching to amplification. Built with precision and tested rigorously, it represents a dependable choice within the manufacturer??s portfolio, trusted by engineers and sourcing specialists worldwide.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current rating is 800mA, allowing it to handle moderate load currents effectively in switching and amplification roles without compromising performance.

What package type does this transistor use?

This device is housed in a TO-18 metal can package, which provides enhanced thermal dissipation and mechanical durability compared to plastic packages, making it suitable for environments requiring robust components.

What voltage limits should be observed when using this transistor?

The collector-emitter voltage should not exceed 60V, and the collector-base voltage is rated up to 80V, ensuring safe operation within medium voltage circuit designs. The emitter-base voltage limit is 5V.

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产品中间询盘

How does the current gain (hFE) range impact circuit design?

The wide current gain range from 40 to 320 offers design flexibility, allowing engineers to optimize amplification levels according to application needs, which is crucial for precise signal control and stability.

Is this transistor suitable for high-frequency applications?

With a transition frequency (fT) of 70 MHz, this transistor is capable of moderate high-frequency operation, making it appropriate for many signal processing and switching applications in industrial electronics.

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