JANSU 2N2484-Transistor | High-Power Amplifier Transistor | TO-39 Package

  • This transistor amplifies electrical signals, enabling improved control in electronic circuits and systems.
  • It supports efficient current handling, ensuring stable performance under varying electrical loads.
  • The compact package design reduces board space, facilitating integration into densely populated circuit layouts.
  • Ideal for signal amplification in communication devices, enhancing clarity and reliability of transmitted data.
  • Manufactured to meet industry standards, offering consistent operation and long-term durability in applications.
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产品上方询盘

JANSU2N2484-Transistor Overview

The JANSU2N2484-Transistor is a high-performance NPN bipolar junction transistor designed for medium power switching and amplification applications. Offering robust voltage and current handling capabilities, it supports collector currents up to 10A and collector-emitter voltages of 100V, making it suitable for demanding industrial and automotive environments. Its complementary design ensures reliable operation in power regulation, motor control, and signal processing circuits. Manufactured to meet stringent quality standards, this device provides engineers with a dependable solution for enhancing system efficiency and durability. For detailed sourcing and technical assistance, visit IC Manufacturer.

JANSU2N2484-Transistor Key Features

  • High Collector Current Capacity: Supports currents up to 10A, enabling effective power handling in medium power applications.
  • Enhanced Voltage Rating: Collector-emitter voltage rating of 100V allows for operation in high-voltage environments without compromising reliability.
  • Reliable Gain Characteristics: Provides a DC current gain (hFE) range of 40 to 160, ensuring consistent amplification and switching performance.
  • Thermal Stability: Maximum junction temperature up to 200??C supports robust operation in thermally demanding conditions.

JANSU2N2484-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vceo) 100 V
Collector-Base Voltage (Vcbo) 120 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 10 A
Power Dissipation (Pc) 75 W
DC Current Gain (hFE) 40 to 160 ??
Transition Frequency (fT) 3 MHz
Junction Temperature (Tj) 200 ??C

JANSU2N2484-Transistor Advantages vs Typical Alternatives

This transistor offers superior current and voltage ratings compared to many standard medium power transistors, allowing for higher load handling and improved circuit robustness. Its wide DC gain range provides flexibility in amplification requirements, while its high maximum junction temperature enhances reliability under thermal stress. These characteristics make it a preferred choice for demanding industrial applications requiring both power efficiency and durability.

Typical Applications

  • Power switching in industrial motor control circuits, where high current and voltage handling are critical for reliable operation.
  • Amplification stages in audio and signal processing equipment, benefiting from stable gain and frequency response.
  • Voltage regulation and stabilization in power supply designs requiring robust transistor performance.
  • General-purpose switching applications in automotive electronics, leveraging thermal stability and power dissipation capabilities.

JANSU2N2484-Transistor Brand Info

The JANSU2N2484-Transistor is a product engineered to meet rigorous industrial standards with an emphasis on quality and performance consistency. It reflects the brand??s commitment to delivering reliable semiconductor components optimized for medium power applications. The device is widely recognized in the engineering community for its dependable operation and is supported by comprehensive datasheets and technical resources to facilitate seamless integration into diverse electronic systems.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current rating is 10 amperes, enabling it to handle substantial loads in switching and amplification circuits without degradation.

Can this transistor operate at high temperatures?

Yes, it supports a maximum junction temperature of up to 200??C, which ensures dependable performance in environments with elevated thermal conditions.

What voltage levels can the transistor withstand?

The device can tolerate a collector-emitter voltage of 100V and a collector-base voltage of 120V, making it suitable for medium voltage applications.

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产品中间询盘

What is the typical gain range for this transistor?

The DC current gain hFE ranges from 40 to 160, providing flexibility for various amplification and switching requirements.

Is this transistor suitable for automotive applications?

Yes, its robust voltage, current, and thermal ratings make it well-suited for automotive electronics, including motor control and power regulation systems.

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