JANSR2N5416U4-Transistor NPN Power Transistor in TO-3 Package by JANSR2N5416U4

  • This transistor amplifies electrical signals, enabling enhanced control in electronic circuits for improved performance.
  • Its voltage rating supports stable operation under varying electrical loads, ensuring consistent functionality.
  • The compact package design reduces board space, facilitating efficient layout in densely packed devices.
  • Ideal for switching applications, it helps manage power flow effectively in automotive and industrial systems.
  • Manufactured to meet stringent quality standards, it offers dependable operation over extended use.
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JANSR2N5416U4-Transistor Overview

The JANSR2N5416U4 is a robust NPN bipolar junction transistor (BJT) designed for medium power amplification and switching applications. It offers a high collector current capacity and voltage rating, making it suitable for industrial and automotive environments requiring reliable performance under demanding conditions. This transistor features a durable TO-220 package that ensures efficient thermal dissipation and ease of integration into various electronic circuits. Engineered for consistent operation and longevity, it supports engineers and sourcing specialists in delivering dependable solutions. For further technical support and sourcing, visit IC Manufacturer.

JANSR2N5416U4-Transistor Key Features

  • High Collector Current Capacity: Supports up to 6A of continuous current, enabling effective power handling in switching and amplification tasks.
  • Collector-Emitter Voltage Rating: Withstands up to 100V, suitable for medium voltage applications requiring robust voltage tolerance.
  • TO-220 Package: Facilitates efficient heat dissipation and straightforward PCB mounting, enhancing reliability in industrial environments.
  • Complementary Device Compatibility: Works seamlessly with complementary transistors for push-pull amplifier configurations, improving circuit design flexibility.

JANSR2N5416U4-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 6 A
Total Power Dissipation (Ptot) 75 W
DC Current Gain (hFE) 15?C75 ?C
Transition Frequency (fT) 3 MHz
Operating Junction Temperature (TJ) -65 to +200 ??C

JANSR2N5416U4-Transistor Advantages vs Typical Alternatives

This transistor offers a combination of high current capacity and voltage rating that surpasses many standard BJTs in similar packages. Its robust TO-220 housing improves thermal management, enhancing reliability and operational stability. Compared to typical low-power transistors, it provides greater power handling and durability, making it ideal for industrial and automotive applications where efficiency and long-term performance are critical.

Typical Applications

  • Power amplification stages in audio and industrial signal processing circuits where medium power handling is required to maintain signal integrity and efficiency.
  • Switching regulators and power supply circuits, benefiting from the high collector current and voltage ratings for reliable operation.
  • Motor control drivers in automotive or industrial machinery, leveraging its rugged design for consistent switching performance.
  • General-purpose medium power switching applications, including relay driving and load switching in various control systems.

JANSR2N5416U4-Transistor Brand Info

The JANSR2N5416U4 transistor is a product designed and manufactured under stringent quality standards to meet industrial and automotive requirements. This device is part of a trusted lineup known for consistent performance, durability, and ease of integration. It reflects the brand??s commitment to providing engineers with components that deliver reliable operation in demanding environments, supported by comprehensive technical documentation and availability through authorized distributors.

FAQ

What type of transistor is the JANSR2N5416U4?

The JANSR2N5416U4 is an NPN bipolar junction transistor (BJT), designed primarily for medium power amplification and switching purposes. Its structure allows it to efficiently handle significant collector current and voltage ratings suitable for industrial applications.

What package does this transistor use, and why is it important?

This device is housed in a TO-220 package, which is critical for effective heat dissipation and mechanical robustness. The package facilitates easy mounting on heat sinks or PCBs, helping ensure stable operation under high power conditions.

What is the maximum collector current supported by this transistor?

The maximum continuous collector current rating is 6 amperes. This high current capacity makes it suitable for controlling medium-power loads and amplifiers where reliable current handling is essential.

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Can this transistor be used in automotive applications?

Yes, the device is designed to withstand harsh environments typical of automotive applications, including a wide operating temperature range and high voltage tolerance, ensuring dependable performance in engine control and other automotive circuits.

How does the JANSR2N5416U4 perform in terms of gain and frequency response?

The transistor features a DC current gain (hFE) ranging from 15 to 75 and a transition frequency (fT) of approximately 3 MHz. These parameters indicate its suitability for medium-frequency amplifier circuits and switching applications where moderate gain and speed are required.

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