JANSR2N5154U3/TR NPN Transistor by JANSR in TO-252 Package ?C High Performance

  • This device functions as a transistor offering efficient switching and amplification for electronic circuits.
  • JANSR2N5154U3/TR supports key electrical characteristics that ensure stable performance under varying loads.
  • The compact package design facilitates easy integration and saves valuable board space in tight layouts.
  • Ideal for use in power regulation circuits, it enhances control and responsiveness in demanding applications.
  • Manufactured to meet industry standards, it provides consistent reliability and long-term operational stability.
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产品上方询盘

JANSR2N5154U3/TR Overview

The JANSR2N5154U3/TR is a robust NPN bipolar junction transistor designed to deliver reliable switching and amplification performance in industrial and commercial applications. Offering a maximum collector current of 600mA and a collector-emitter voltage rating of 40V, this transistor supports moderate power handling with efficient gain characteristics. Its military-grade JAN (Joint Army-Navy) qualification ensures enhanced durability and consistent operation under harsh environmental conditions. Ideal for engineers and sourcing specialists seeking dependable semiconductor solutions, this device combines rugged construction with precise electrical parameters, making it suitable for a broad range of signal and power amplification tasks. For more detailed technical insights, visit IC Manufacturer.

JANSR2N5154U3/TR Key Features

  • High collector current capability: Supports up to 600mA, enabling efficient switching and amplification in moderate power applications.
  • Voltage handling: Rated for a maximum collector-emitter voltage of 40V, ensuring reliable operation within industrial voltage ranges.
  • Military-grade JAN qualification: Guarantees superior reliability and performance under demanding environmental and electrical stress conditions.
  • Current gain (hFE) range: Provides a gain between 40 and 100, facilitating stable amplification across various circuit designs.
  • Complementary packaging: Available in a TO-18 metal can package, offering excellent thermal dissipation and mechanical durability.
  • Low saturation voltage: Ensures efficient switching with minimal power loss, enhancing overall circuit efficiency.
  • Wide operating temperature range: Suitable for industrial environments, maintaining performance from -55??C to +125??C.

JANSR2N5154U3/TR Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (Vceo)40V
Collector-Base Voltage (Vcbo)60V
Emitter-Base Voltage (Vebo)5V
Collector Current (Ic)600mA
Power Dissipation (Pd)625mW
DC Current Gain (hFE)40 to 100
Transition Frequency (fT)100MHz
Operating Temperature Range-55 to +125??C
Package TypeTO-18

JANSR2N5154U3/TR Advantages vs Typical Alternatives

This transistor offers a compelling combination of military-grade reliability and solid electrical performance. Compared to typical commercial-grade devices, its JAN qualification ensures enhanced durability in extreme temperature and mechanical stress environments. The balance of current gain and voltage ratings makes it versatile for amplification and switching tasks while its low saturation voltage reduces power loss. These factors collectively deliver superior integration potential and long-term operational stability, making it an advantageous choice over standard alternatives in rugged industrial electronics.

Typical Applications

  • Signal amplification and switching in industrial control circuits, where reliable transistor performance under varying environmental conditions is critical.
  • Low to medium power driver stages in communication and instrumentation equipment.
  • General-purpose transistor functions in military and aerospace electronics requiring JAN-certified components.
  • Temperature-sensitive applications benefiting from the TO-18 package??s thermal conductivity and mechanical robustness.

JANSR2N5154U3/TR Brand Info

The JANSR2N5154U3/TR is a product bearing the JAN (Joint Army-Navy) designation, signifying its compliance with stringent military standards for semiconductor devices. This classification guarantees rigorous testing and quality assurance, making it suitable for defense, aerospace, and high-reliability industrial applications. The transistor??s design and packaging reflect a focus on durability, consistency, and performance stability, supporting critical systems where component failure is not an option.

FAQ

What is the maximum collector current rating of the transistor?

The device can handle a maximum collector current of 600mA, making it suitable for moderate power switching and amplification applications.

What package type is used for this transistor, and why is it important?

It is housed in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical protection, crucial for maintaining performance in harsh environments.

What does the JAN qualification imply for this transistor?

JAN qualification ensures the transistor meets military-grade reliability and durability standards, including rigorous testing for temperature extremes, vibration, and electrical stress, which is essential for mission-critical applications.

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产品中间询盘

What is the typical current gain (hFE) range, and how does it affect circuit design?

The current gain ranges from 40 to 100, offering flexibility to designers by providing sufficient amplification without excessive noise, suitable for a wide variety of analog and switching circuits.

Can this transistor operate reliably at high temperatures?

Yes, it supports an operating temperature range from -55??C to +125??C, ensuring stable performance even in demanding industrial or military environments.

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