JANSR2N5153U3-Transistor PNP Amplifier Transistor in TO-92 Package by JAN

  • This transistor controls electrical signals, enabling efficient switching and amplification in circuits.
  • Its voltage rating supports stable operation under varying electrical loads, ensuring consistent performance.
  • The compact package reduces board space, allowing for integration into smaller electronic devices.
  • Ideal for signal processing in communication equipment, enhancing signal clarity and system responsiveness.
  • Manufactured to meet industry standards, providing reliable functionality over extended use.
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JANSR2N5153U3-Transistor Overview

The JANSR2N5153U3 is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial and military-grade electronics. It features robust voltage and current ratings, enabling reliable operation in demanding environments. This transistor offers a balanced combination of gain, frequency response, and power dissipation, making it suitable for a wide range of analog and digital circuits. Its hermetically sealed metal can package ensures enhanced thermal stability and long-term reliability. Available through IC Manufacturer, this device meets stringent standards for quality and consistency in critical electronic designs.

JANSR2N5153U3-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Power Dissipation (PD) 625 mW
DC Current Gain (hFE) 40 to 100
Transition Frequency (fT) 100 MHz (typical)
Package Type Hermetically Sealed Metal Can (TO-18)

JANSR2N5153U3-Transistor Key Features

  • High voltage tolerance: Supports up to 80 V collector-base voltage, enabling use in high-voltage switching circuits and industrial control systems.
  • Robust collector current capacity: Handles continuous collector currents up to 600 mA, ensuring reliable performance in power amplification stages.
  • Wide DC current gain range: Offers gain between 40 and 100, allowing flexible design for low-noise amplification and signal processing.
  • Hermetically sealed TO-18 package: Provides excellent protection against moisture and contaminants, enhancing device longevity in harsh environments.
  • High transition frequency: With a typical fT of 100 MHz, this transistor supports fast switching and high-frequency amplification needs.

Typical Applications

  • Switching and amplification in industrial control systems where durability and stable operation under varied voltages are critical.
  • Signal amplification for military and aerospace electronics requiring hermetic sealing and consistent gain performance.
  • Driver stages in power management circuits benefiting from the transistor??s high current capacity and voltage ratings.
  • General-purpose analog circuits including audio amplification and high-frequency oscillators within harsh environmental conditions.

JANSR2N5153U3-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling capabilities paired with a hermetically sealed metal can package, which provides enhanced reliability compared to plastic-encapsulated alternatives. Its broad gain range and high-frequency response make it versatile for both switching and amplification tasks. The robust design ensures stable operation in demanding industrial and military environments, reducing failure rates and maintenance needs.

JANSR2N5153U3-Transistor Brand Info

The JANSR2N5153U3 transistor is a military-qualified version of the popular 2N5153 transistor, produced by manufacturers specializing in high-reliability discrete semiconductors. It is typically offered by suppliers focusing on defense and aerospace sectors, adhering to strict JAN (Joint Army-Navy) standards. The device??s hermetic TO-18 metal package and rigorous screening processes underscore its suitability for mission-critical applications requiring consistent performance under extreme conditions.

FAQ

What is the maximum collector current rating of this transistor?

The transistor is rated for a maximum continuous collector current of 600 mA, making

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