JANSR2N5153U3/TR Overview
The JANSR2N5153U3/TR is a precision silicon NPN transistor designed for high-reliability and rugged industrial applications. Featuring robust voltage and current ratings, it supports switching and amplification tasks in demanding electronic circuits. This device is optimized for consistent performance under harsh conditions, making it an excellent choice for military, aerospace, and industrial control systems. Its standardized package and strict quality controls ensure reliable integration and long-term durability. For procurement and detailed specifications, refer to IC Manufacturer.
JANSR2N5153U3/TR Key Features
- High voltage rating: With a collector-emitter voltage rated up to 60V, it enables efficient switching in industrial power circuits.
- Robust collector current capability: Supports a continuous collector current of 0.6A, suitable for moderate power amplification and switching.
- Low saturation voltage: Ensures minimal power loss and heat dissipation, enhancing overall circuit efficiency.
- Military-grade qualification: Offers enhanced reliability and performance consistency in extreme environments, critical for defense and aerospace applications.
JANSR2N5153U3/TR Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Silicon |
| Collector-Emitter Voltage (Vceo) | 60 V |
| Collector-Base Voltage (Vcbo) | 80 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 0.6 A (continuous) |
| Gain Bandwidth Product (fT) | 100 MHz (typical) |
| DC Current Gain (hFE) | 40 to 120 |
| Power Dissipation (Pd) | 1 W |
| Operating Temperature Range | -55??C to +125??C |
| Package Type | TO-18 Hermetic Metal Can |
JANSR2N5153U3/TR Advantages vs Typical Alternatives
This transistor stands out for its military-grade qualification, ensuring superior reliability over commercial equivalents. Its balance of voltage handling and gain supports precision switching and amplification with low saturation losses. The hermetic metal can package offers enhanced protection against environmental stresses, improving longevity and performance stability when compared to standard plastic encapsulated devices.
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Typical Applications
- Industrial control systems requiring reliable switching under high voltage and temperature extremes, such as motor drivers and sensor interfaces.
- Military and aerospace electronics where ruggedness and long-term stability are critical.
- Signal amplification in precision measurement and instrumentation circuits.
- General-purpose switching in power management and embedded control boards.
JANSR2N5153U3/TR Brand Info
The JANSR2N5153U3/TR is a rigorously tested transistor produced under stringent military standards. It is engineered to meet harsh environment requirements with consistent electrical characteristics and mechanical robustness. This device is part of a product line focused on delivering dependable semiconductor components for defense, aerospace, and industrial sectors, ensuring quality and performance in mission-critical applications.
FAQ
What is the maximum collector current rating of this transistor?
The device supports a continuous collector current of up to 0.6 amperes, making it suitable for moderate power amplification and switching tasks in industrial and military circuits.
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What package does the JANSR2N5153U3/TR use, and why is it important?
It is housed in a TO-18 hermetic metal can package, which provides excellent protection against moisture, contaminants, and mechanical stress, enhancing reliability in harsh environments.
Can this transistor operate in extreme temperature conditions?
Yes, it is rated for operation between -55??C and +125??C, allowing it to function reliably in a wide range of industrial and military temperature extremes.
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What is the typical current gain (hFE) range for this transistor?
The DC current gain ranges from 40 to 120, which supports efficient signal amplification and switching performance across various applications.
Is this transistor suitable for high-frequency switching?
With a typical gain bandwidth product around 100 MHz, it supports moderate high-frequency switching and amplification, suitable for many control and signal processing applications.
