The JANSR2N5153 transistor is a high-voltage NPN bipolar junction transistor designed for robust switching and amplification in industrial and military-grade applications. With a collector-emitter voltage rating up to 120 V and a collector current maximum of 600 mA, it offers reliable performance in demanding environments. This transistor provides consistent gain and fast switching speeds, making it suitable for signal processing, power regulation, and driver circuits. Its rugged construction ensures enhanced durability and thermal stability, meeting stringent quality standards. For engineers and sourcing specialists seeking a dependable, high-voltage transistor, the JANSR2N5153 represents a precise choice. More details are available at IC Manufacturer.
JANSR2N5153-Transistor Technical Specifications
Parameter
Specification
Transistor Type
NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)
120 V
Collector-Base Voltage (VCBO)
150 V
Emitter-Base Voltage (VEBO)
5 V
Collector Current (IC)
600 mA
Power Dissipation (Ptot)
625 mW
DC Current Gain (hFE)
40 to 160
Transition Frequency (fT)
80 MHz (typical)
Package Type
TO-18 Metal Can
JANSR2N5153-Transistor Key Features
High Voltage Tolerance: Supports collector-emitter voltages up to 120 V, enabling use in high-voltage switching and amplification circuits.
Moderate Current Capacity: Handles collector currents up to 600 mA, suitable for moderate power applications without compromising reliability.
Wide Gain Range: DC current gain between 40 and 160 ensures flexibility in amplification applications, allowing for precise circuit tuning.
Fast Switching Performance: Typical transition frequency of 80 MHz supports efficient operation in signal processing and high-speed switching circuits.
Durable TO-18 Package: Metal can package ensures excellent thermal dissipation and mechanical robustness, enhancing device longevity in industrial environments.
Typical Applications
Signal amplification in industrial control systems requiring stable gain and high voltage endurance for improved signal integrity.
Switching applications in power management circuits where robust voltage handling and reliable current flow are essential.
Driver stages for relay coils or small motors, benefiting from the moderate current capacity and fast switching speed.
Low-noise amplification circuits in communication equipment, leveraging the transistor??s gain characteristics and high-frequency response.
JANSR2N5153-Transistor Advantages vs Typical Alternatives
This transistor provides a balanced combination of high voltage tolerance and moderate current capacity, outperforming many standard NPN transistors in ruggedness and reliability. Its wide gain range and fast switching frequency make it ideal for precision amplification and switching applications where accuracy and responsiveness are critical. The metal can TO-18 package further enhances thermal management and mechanical durability, offering a distinct advantage in industrial and military environments compared to plastic-packaged alternatives.
The JANSR2N5153 is a JAN (Joint Army-Navy) qualified semiconductor device, signifying compliance with rigorous military standards for quality and reliability. Manufactured under strict quality controls, this transistor is designed to meet the demanding needs of aerospace, defense, and industrial sectors. The JAN designation ensures traceability, enhanced ruggedness, and extended temperature range operation. This product is typically sourced from established semiconductor manufacturers specializing in military-grade components, assuring users of consistent performance in critical applications.
