JANSR2N5152L-Transistor Overview
The JANSR2N5152L-Transistor is a high-performance PNP bipolar junction transistor designed for medium power switching and amplification applications. It offers robust electrical characteristics with a collector current rating suitable for various industrial and commercial electronic circuits. Engineered for reliability and stable operation, this transistor supports efficient signal control in demanding environments. Its complementary design and stable gain make it ideal for use in amplifier stages and switching devices. For detailed procurement and technical support, visit IC Manufacturer.
JANSR2N5152L-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | -60 V |
| Collector Current (Ic) | -600 mA |
| Power Dissipation (Pd) | 625 mW |
| Gain Bandwidth Product (fT) | 80 MHz |
| DC Current Gain (hFE) | 30 to 300 (depending on Ic) |
| Junction Temperature (Tj) | 200 ??C max |
| Package Type | TO-18 Metal Can |
| Transition Frequency | 80 MHz |
| Collector-Base Voltage (Vcbo) | -60 V |
JANSR2N5152L-Transistor Key Features
- High voltage tolerance: With a collector-emitter voltage rating of -60 V, it supports a wide range of applications requiring medium voltage switching and amplification.
- Moderate collector current capability: Rated for up to -600 mA, it ensures reliable performance in circuits with moderate power demands.
- Wide gain range: A DC current gain varying from 30 to 300 allows flexible use in amplification stages where gain stability and signal fidelity are critical.
- Robust thermal characteristics: Maximum junction temperature of 200 ??C supports long-term reliability in harsh environments.
Typical Applications
- Signal amplification in audio and low-power RF circuits, where stable gain and frequency response are essential.
- Medium power switching in industrial control systems requiring reliable transistor operation under varying loads.
- Complementary transistor pairs in push-pull amplifier configurations for enhanced linearity and efficiency.
- General purpose switching in automotive and consumer electronics, benefiting from its durable packaging and electrical ratings.
JANSR2N5152L-Transistor Advantages vs Typical Alternatives
This transistor delivers a reliable combination of voltage and current ratings with a wide gain bandwidth, making it advantageous over typical alternatives that may lack stability at higher frequencies or have lower current handling. Its robust thermal limits and metal can package enhance reliability and heat dissipation, providing superior operational stability and longevity in industrial applications.
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JANSR2N5152L-Transistor Brand Info
The JANSR2N5152L is a military-grade variant of the popular 2N5152 PNP transistor, originally standardized by JEDEC. It is manufactured under strict quality and reliability standards suitable for aerospace, defense, and other high-reliability sectors. The “JAN” prefix indicates compliance with Joint Army-Navy specifications, ensuring enhanced durability and performance under extreme conditions. This product is typically offered by authorized semiconductor suppliers specializing in military and industrial electronic components.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current for the JANSR2N5152L transistor is rated at -600 mA. This current rating ensures it can handle moderate power loads in switching and amplification applications without compromising device integrity.
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Is this transistor suitable for high-frequency applications?
Yes, with a gain bandwidth product (fT) of approximately 80 MHz, it is suitable for moderate frequency amplification and switching tasks, including audio and some RF circuits, where stable performance is required.
What package type does the JANSR2N5152L come in?
This device is housed in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical protection, making it suitable for harsh industrial and military environments.
