JANSR2N5151L-Transistor NPN Amplifier Transistor in TO-92 Package by JAN

  • This transistor amplifies electrical signals, enabling improved performance in switching and amplification tasks.
  • It features a voltage rating suitable for handling moderate power, ensuring stable operation under typical load conditions.
  • The compact package reduces board space, allowing for efficient layout in densely packed electronic assemblies.
  • Ideal for use in signal processing circuits, it supports reliable switching and amplification in consumer and industrial devices.
  • Manufactured under controlled processes, it offers consistent quality and dependable long-term functionality.
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JANSR2N5151L-Transistor Overview

The JANSR2N5151L-Transistor is a high-performance PNP bipolar junction transistor optimized for industrial and military-grade applications requiring robust switching and amplification capabilities. Characterized by its low noise and high gain, this transistor supports reliable operation under demanding electrical conditions, making it suitable for precision analog circuits and power management systems. Designed and manufactured to meet stringent quality standards, it offers enhanced thermal stability and consistent performance. Engineers and sourcing specialists can rely on this transistor for applications demanding durability and accuracy. For more detailed sourcing, visit IC Manufacturer.

JANSR2N5151L-Transistor Technical Specifications

Parameter Specification
Type PNP Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (V_CEO) -60 V
Collector Current (I_C) -600 mA
Power Dissipation (P_D) 800 mW
Gain Bandwidth Product (f_T) 100 MHz (typical)
DC Current Gain (h_FE) 40 to 160
Transition Frequency 100 MHz
Package Type TO-18 Metal Can
Operating Temperature Range -55??C to +150??C

JANSR2N5151L-Transistor Key Features

  • High voltage tolerance: Supports up to -60 V collector-emitter voltage, enabling use in demanding power circuits.
  • Robust current handling: Handles collector currents of up to -600 mA, suitable for medium power switching and amplification.
  • Wide gain range: DC current gain between 40 and 160 offers design flexibility for various amplification levels.
  • High frequency response: Transition frequency of 100 MHz ensures effective operation in high-speed signal applications.
  • Reliable thermal performance: Operating temperature from -55??C to +150??C supports stable function in harsh environments.
  • Durable TO-18 package: Metal can packaging improves heat dissipation and mechanical robustness.
  • Low noise characteristics: Suitable for sensitive analog circuits requiring minimal signal distortion.

Typical Applications

  • Signal amplification in industrial control systems where stable gain and low noise are critical for sensor accuracy and data integrity.
  • Switching elements in power regulation circuits, enabling efficient control of medium current loads with high voltage tolerance.
  • Use in military and aerospace electronics due to its ability to withstand wide temperature ranges and rigorous environmental conditions.
  • Analog circuit designs such as audio preamplifiers and RF amplifiers where high frequency response and low distortion are essential.

JANSR2N5151L-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling compared to typical small-signal BJTs, ensuring reliable performance in more demanding industrial and military applications. Its wide gain range and high transition frequency provide enhanced signal amplification with low noise, while the robust TO-18 metal package improves thermal management and mechanical durability. These advantages make it a preferred choice for engineers seeking a balance of sensitivity, power efficiency, and long-term reliability.

JANSR2N5151L-Transistor Brand Info

The JANSR2N5151L is a product aligned with JEDEC standards for military and aerospace-grade bipolar transistors. It is manufactured under stringent quality controls to ensure high reliability and performance consistency. The device is typically supplied by specialized semiconductor manufacturers focusing on ruggedized components for industrial and defense markets. This transistor’s brand lineage reflects a commitment to durability and precision, making it suitable for critical applications requiring extended operational lifetimes and resistance to environmental stresses.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current is -600 mA, allowing the transistor to handle moderate power switching and amplification

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