JANSR2N3700UB-Transistor NPN Amplifier Transistor in TO-92 Package ?C JAN Military Grade

JANSR2N3700UB-Transistor Overview

The JANSR2N3700UB is a high-performance NPN bipolar junction transistor (BJT) designed for robust switching and amplification applications. Featuring a collector-emitter voltage rating of 60 V and a collector current capacity up to 200 mA, this transistor supports medium power needs in industrial and consumer electronics. Its complementary gain bandwidth product and low saturation voltage enable efficient operation in signal amplification and switching circuits. The device??s encapsulation in a standard TO-18 metal can package ensures reliable thermal dissipation and mechanical durability. Ideal for engineers and sourcing specialists, this transistor balances performance, ruggedness, and cost-effectiveness in demanding electronic designs. For more information, visit IC Manufacturer.

JANSR2N3700UB-Transistor Technical Specifications

JANSR2N3700UB-Transistor Key Features

• High voltage tolerance up to 60 V: Enables reliable operation in circuits requiring medium voltage switching and amplification without risk of breakdown.
• Collector current capacity of 200 mA: Supports moderate load driving capabilities suitable for signal processing and switching tasks.
• Wide gain bandwidth of 100 MHz: Facilitates high-frequency amplification, enhancing performance in RF and analog applications.
• Robust TO-18 metal can package: Provides excellent heat dissipation and mechanical stability for long-term reliability in industrial environments.

Typical Applications

• Signal amplification in audio and RF circuits where medium gain and frequency response are critical for clear output.
• Switching applications in low to medium power industrial control systems requiring reliable transistor switching.
• Driver stages for relay and small motor controls within embedded systems and automation equipment.
• General-purpose amplification and switching in consumer electronic devices and instrumentation.

JANSR2N3700UB-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage handling, current capacity, and frequency response, making it advantageous over typical low-power transistors that may lack adequate voltage tolerance or bandwidth. Its metal can packaging ensures superior thermal management and ruggedness compared to plastic-encapsulated alternatives, improving long-term reliability in industrial applications. The wide gain range supports flexible circuit design, while maintaining stable performance under varying load conditions.

JANSR2N3700UB-Transistor Brand Info

The JANSR2N3700UB is a military-grade variant of the popular 2N3700 transistor, originally standardized under JEDEC and produced by several reputable semiconductor manufacturers. The “JAN” prefix denotes compliance with Joint Army-Navy quality standards, ensuring enhanced reliability and performance consistency for aerospace, defense, and industrial sectors. The device is typically sourced from manufacturers specializing in high-reliability discrete semiconductors and is recognized for its rugged construction and stringent quality testing aligned with military specifications.

FAQ

What is the maximum operating voltage of this transistor?

The transistor can withstand a maximum collector-emitter voltage of 60 volts, allowing it to operate safely within circuits requiring moderate voltage levels without risk of breakdown.

Can this transistor be used for high-frequency applications?

Yes, with a transition frequency of approximately 100 MHz, it is suitable for moderate high-frequency amplification and switching tasks in RF and analog signal processing.