JANSR2N3637UB/TR Overview
The JANSR2N3637UB/TR is a high-performance NPN bipolar junction transistor designed for medium power amplification and switching applications. Featuring a robust collector current rating and optimized gain characteristics, it excels in delivering reliable operation across a wide temperature range. This transistor is particularly suited for industrial and commercial electronic circuits requiring stable switching and amplification. Engineered for durability and efficient thermal management, it supports demanding environments while maintaining consistent electrical performance. Sourced through IC Manufacturer, this device meets stringent military and industrial quality standards, ensuring dependable integration into complex electronic systems.
JANSR2N3637UB/TR Key Features
- High Collector Current Capability: Supports up to 5A continuous collector current, enabling robust power handling in medium-power circuits.
- Moderate Voltage Rating: Collector-Emitter voltage rated at 60V, suitable for a wide range of switching and amplification tasks without breakdown risk.
- Enhanced Current Gain (hFE): Provides a typical gain of 40 to 160, improving signal amplification efficiency and reducing input drive requirements.
- Military-Grade Quality: Designed to meet stringent JAN (Joint Army-Navy) specifications for reliability and ruggedness in harsh conditions.
- Robust Thermal Performance: Maximum junction temperature of 200??C supports operation under elevated thermal stress, extending device lifespan.
- Low Saturation Voltage: Ensures efficient switching with reduced power dissipation, enhancing overall system energy efficiency.
- Standard TO-220 Package: Facilitates easy mounting and heat dissipation in industrial applications.
JANSR2N3637UB/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) ?C Continuous | 5 | A |
| Power Dissipation (PD) | 80 | W |
| DC Current Gain (hFE) | 40?C160 | Unitless |
| Transition Frequency (fT) | 30 | MHz |
| Operating Junction Temperature (TJ) | -65 to +200 | ??C |
| Storage Temperature Range (TSTG) | -65 to +200 | ??C |
| Package Type | TO-220 | ?? |
JANSR2N3637UB/TR Advantages vs Typical Alternatives
This transistor offers superior collector current handling and a broad gain range compared to typical small-signal alternatives, making it ideal for medium-power applications. Its military-grade qualification ensures enhanced reliability under demanding conditions. The low saturation voltage improves switching efficiency, reducing power loss and thermal stress. Combined with a versatile TO-220 package, it allows straightforward heat dissipation and integration, distinguishing it from more fragile or less robust competitors.
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Typical Applications
- Power amplification in industrial control systems requiring reliable medium power output and stable gain performance.
- Switching elements in power supply regulators and converters where efficient, high-current handling is essential.
- Driver stages for relays and solenoids in automation and instrumentation circuits.
- Signal amplification in audio and communication equipment needing moderate frequency response and linearity.
JANSR2N3637UB/TR Brand Info
The JANSR2N3637UB/TR transistor is manufactured following Joint Army-Navy (JAN) standards, reflecting a heritage of ruggedness and precision. This designation signifies compliance with military-grade quality assurance processes, ensuring consistent performance in critical applications. The product??s brand reputation is rooted in delivering components that withstand environmental extremes and maintain operational integrity, making it a preferred choice for engineers sourcing dependable semiconductor devices for industrial and defense-related electronics.
FAQ
What is the maximum collector current rating of this transistor?
The transistor supports a continuous collector current of up to 5 amperes, enabling it to handle medium-power applications effectively without risk of damage when operated within specified limits.
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Can this transistor operate at high temperatures?
Yes, it has an operating junction temperature range from -65??C up to +200??C, making it suitable for applications subject to elevated thermal conditions or harsh environmental factors.
What package type does this device use, and why is it important?
It is housed in a TO-220 package, which provides efficient heat dissipation and mechanical stability. This package type simplifies mounting on heatsinks and enhances thermal management in power applications.
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What is the typical DC current gain for this transistor?
The typical DC current gain (hFE) ranges from 40 to 160, allowing for good amplification performance across various operating points and making it suitable for both switching and linear amplification tasks.
Is this transistor suitable for military or industrial applications?
Yes, the JAN prefix denotes compliance with military-grade standards, ensuring enhanced reliability, ruggedness, and quality suitable for demanding industrial and defense environments.
