JANSR2N3636L-Transistor Overview
The JANSR2N3636L is a robust NPN silicon transistor designed for high power amplification and switching applications. Engineered to handle collector currents up to 15A and voltages reaching 160V, it is well-suited for demanding industrial environments. This transistor offers a high DC current gain (hFE) range of 40 to 320, ensuring efficient signal amplification with stability across various operating conditions. Its TO-3 metal can package provides excellent thermal dissipation, enhancing reliability in power-intensive circuits. For engineers and sourcing specialists seeking a dependable, high-performance transistor, the JANSR2N3636L represents a balanced solution from a reputable supplier. More details are available at IC Manufacturer.
JANSR2N3636L-Transistor Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 160 | V |
| Collector-Base Voltage (VCBO) | 230 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 15 | A |
| Power Dissipation (PC) | 115 | W |
| DC Current Gain (hFE) | 40 to 320 | (unitless) |
| Transition Frequency (fT) | 7 | MHz |
| Operating Junction Temperature (TJ) | +200 | ??C |
JANSR2N3636L-Transistor Key Features
- High collector current rating: Supports continuous currents up to 15A, enabling operation in high-power switching and amplification circuits.
- Wide voltage tolerance: With a collector-emitter voltage rating of 160V and collector-base voltage of 230V, it accommodates a broad range of industrial power supply applications.
- Robust thermal performance: The TO-3 metal can package ensures superior heat dissipation, enhancing reliability and long-term operational stability under heavy loads.
- Versatile gain bandwidth: A transition frequency of 7MHz allows for efficient signal amplification in medium-frequency applications.
Typical Applications
- Power amplifiers in industrial control systems requiring high current and voltage handling capability for reliable signal processing.
- Switching circuits in power supply regulation and motor control applications where efficient load handling is critical.
- Audio frequency amplification stages in ruggedized equipment demanding consistent performance under thermal stress.
- General-purpose high-power transistor use in industrial automation and instrumentation requiring durable and precise switching elements.
JANSR2N3636L-Transistor Advantages vs Typical Alternatives
This transistor offers a high collector current capacity and voltage tolerance that exceed many typical alternatives, providing engineers with greater design flexibility in power circuits. Its TO-3 metal package enhances thermal management compared to plastic encapsulated devices, improving reliability and lifespan. The broad hFE range ensures stable gain for various operating conditions, making it a preferred choice for industrial-grade amplification and switching applications where accuracy and robustness are essential.
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JANSR2N3636L-Transistor Brand Info
The JANSR2N3636L is a product typically associated with reputable semiconductor manufacturers specializing in high-power discrete components. The JAN (Joint Army-Navy) prefix indicates military-grade quality standards, ensuring stringent reliability and performance metrics. This transistor is produced under strict quality controls to meet demanding industrial and defense sector requirements. Its construction and testing are aligned with MIL-STD specifications, making it suitable for critical applications requiring durability and consistency across harsh environments.
FAQ
What is the maximum collector current rating for this transistor?
The transistor supports a maximum continuous collector current of 15 amperes, allowing it to handle significant load currents in
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