The JANSR2N3635L is a high-performance NPN bipolar junction transistor (BJT) designed for switching and amplification applications in industrial and commercial electronics. Engineered for robustness, it features a high collector-emitter voltage rating and substantial collector current capacity, making it well-suited for medium-power circuits. This transistor offers reliable operation across a broad temperature range, ensuring stability in demanding environments. Its package style supports easy integration into various PCB layouts. Available through IC Manufacturer, this device delivers consistent performance for engineers and sourcing specialists requiring durable and efficient transistor solutions.
JANSR2N3635L-Transistor Technical Specifications
Parameter
Value
Unit
Collector-Emitter Voltage (VCEO)
60
V
Collector-Base Voltage (VCBO)
75
V
Emitter-Base Voltage (VEBO)
5
V
Collector Current (IC)
2
A
Power Dissipation (Ptot)
30
W
DC Current Gain (hFE)
40 to 160
?C
Transition Frequency (fT)
30
MHz
Operating Junction Temperature (TJ)
-65 to +200
??C
Storage Temperature (TSTG)
-65 to +200
??C
JANSR2N3635L-Transistor Key Features
High voltage handling: Supports up to 60V collector-emitter voltage, enabling use in moderately high-voltage circuits without breakdown risk.
Robust current capacity: Capable of continuous collector current up to 2A, allowing reliable operation in medium-power switching and amplification roles.
Wide gain range: DC current gain between 40 and 160 ensures flexibility for diverse amplification requirements and circuit designs.
Thermal endurance: Operates safely across a wide temperature range (-65??C to +200??C), making it suitable for harsh industrial environments.
Efficient switching speed: Transition frequency of 30 MHz supports moderate-frequency applications, balancing speed and power handling.
Standardized package: Facilitates straightforward PCB mounting and integration in existing designs.
Typical Applications
Power switching circuits in industrial control systems where reliable medium-power transistor operation is essential for performance and durability.
Audio amplification stages in consumer and professional electronics, benefiting from a broad gain range and low distortion.
Motor driver circuits requiring efficient control of current loads up to 2A within compact transistor packages.
Voltage regulation and power management modules needing stable transistor behavior over wide temperature variations.
JANSR2N3635L-Transistor Advantages vs Typical Alternatives
This transistor stands out due to its robust voltage and current ratings combined with a wide operating temperature range, offering improved reliability over typical low-power BJTs. Its flexible gain range and moderate transition frequency provide a balanced solution for both switching and amplification, making it a versatile choice. Compared to alternatives, it delivers consistent performance in demanding industrial applications while simplifying integration with standard packaging.
The JANSR2N3635L transistor is manufactured under military or industrial standards, typically associated with high-reliability semiconductor producers. The ??JAN?? prefix denotes Joint Army-Navy quality assurance, ensuring the device meets stringent performance and durability criteria. This makes it a preferred component for aerospace, defense, and industrial electronics sectors requiring dependable transistor performance. The product is sourced from reputable suppliers known for stringent quality control and traceability, supporting critical applications.
FAQ
What is the maximum collector current rating of this transistor?
