JANSR2N3019S-Transistor NPN Amplifier Transistor in TO-39 Metal Can Package

  • This transistor controls electrical current flow efficiently, enabling precise signal amplification and switching in circuits.
  • Its voltage rating supports stable operation under typical loads, ensuring consistent performance in various electronic designs.
  • The package offers a compact footprint, which helps save board space and simplifies integration into tight layouts.
  • Ideal for use in audio amplifiers, it enhances sound clarity by maintaining signal integrity throughout the circuit.
  • Manufactured to meet strict quality standards, this component provides dependable operation over extended periods.
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JANSR2N3019S-Transistor Overview

The JANSR2N3019S is a robust NPN silicon transistor designed for medium power amplification and switching applications. Offering reliable performance under varying electrical conditions, it features a maximum collector current of 800 mA and a collector-emitter voltage rating suitable for industrial and automotive environments. Its complementary characteristics make it ideal for signal amplification and general-purpose switching tasks in both analog and digital circuits. Designed to meet stringent quality standards, this transistor balances efficiency and durability, making it a dependable choice for engineers and sourcing specialists seeking stable semiconductor components. For more product details and sourcing options, visit IC Manufacturer.

JANSR2N3019S-Transistor Technical Specifications

Parameter Value Unit Description
Collector-Emitter Voltage (VCEO) 60 V Maximum voltage between collector and emitter
Collector-Base Voltage (VCBO) 75 V Maximum voltage between collector and base
Emitter-Base Voltage (VEBO) 5 V Maximum voltage between emitter and base
Collector Current (IC) 800 mA Maximum continuous collector current
Power Dissipation (Ptot) 800 mW Maximum power dissipation at 25??C
DC Current Gain (hFE) 40 ?C 70 ?C Gain at IC=150 mA, VCE=10 V
Transition Frequency (fT) 100 MHz Frequency at which current gain drops to unity
Operating Junction Temperature (TJ) -65 to +200 ??C Safe operating temperature range

JANSR2N3019S-Transistor Key Features

  • High Collector Current Capacity: Supports up to 800 mA, enabling efficient switching and amplification in medium power circuits.
  • Wide Voltage Ratings: Collector-emitter voltage rating of 60 V ensures reliable operation in industrial and automotive voltage environments.
  • Moderate DC Gain: A current gain range of 40 to 70 provides stable amplification performance for signal processing applications.
  • High Transition Frequency: 100 MHz frequency supports fast switching and high-frequency signal applications, enhancing circuit responsiveness.
  • Extended Temperature Range: Operates reliably between -65??C and +200??C, suitable for harsh environments and elevated junction temperatures.
  • Standard TO-18 Package: Enables easy integration with existing PCB designs and robust mechanical protection for the semiconductor die.
  • Industry-Standard Reliability: Constructed to meet military and industrial standards, assuring long-term stability and consistent performance.

Typical Applications

  • Intermediate and driver stages in audio amplifiers, leveraging its medium power capacity for clear signal amplification.
  • Switching regulators and power control circuits requiring reliable transistor switching under moderate currents and voltages.
  • General-purpose amplification in instrumentation and sensor interface circuits, ensuring accurate signal conditioning.
  • Automotive electronic control units (ECUs) where robust voltage and temperature ratings are essential for durability.

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