JANSR2N2484UB-Transistor Overview
The JANSR2N2484UB transistor is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial and military-grade environments. It features robust construction and reliable operation under demanding conditions, ensuring consistent electrical performance. With a collector-emitter voltage rating suitable for moderate power applications and a gain bandwidth product supporting high-frequency switching, this transistor addresses critical needs in signal processing and power control circuits. Engineered to meet stringent quality standards, the device offers durability and precision, making it a preferred choice among engineers and sourcing specialists seeking dependable semiconductor components. Available through IC Manufacturer, it supports a broad range of industrial electronics applications.
JANSR2N2484UB-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 30 V |
| Collector Current (IC) | 0.8 A (max) |
| Power Dissipation (PD) | 0.8 W |
| DC Current Gain (hFE) | 40 to 320 (depending on collector current) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | TO-18 Hermetically Sealed Metal Can |
| Operating Temperature Range | -65??C to +200??C |
JANSR2N2484UB-Transistor Key Features
- High Voltage Tolerance: Supports up to 30 V collector-emitter voltage, enabling use in moderate power switching and amplification circuits.
- Wide Gain Range: DC current gain ranging from 40 to 320 ensures flexible amplification suitable for various signal strengths.
- High-Frequency Operation: Transition frequency of approximately 100 MHz facilitates high-speed switching and RF applications.
- Hermetic Package: The TO-18 metal can package provides excellent environmental protection and long-term reliability under harsh operating conditions.
Typical Applications
- Military and aerospace signal amplification circuits requiring rugged and reliable transistor performance in extreme temperature environments.
- Switching applications in industrial control systems where moderate voltage and current handling are necessary.
- High-frequency analog circuits and RF amplifiers leveraging the transistor’s transition frequency capabilities.
- General-purpose amplification in instrumentation and sensor interface circuits demanding stable gain and low noise operation.
JANSR2N2484UB-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and environmental resistance compared to standard plastic-encapsulated alternatives due to its hermetic TO-18 package. Its broad operating temperature range and high gain bandwidth product enable effective performance in both high-speed and harsh environment applications. The combination of moderate power handling and consistent gain makes it a versatile component, outperforming typical transistors that lack such robust packaging and precise electrical characteristics.
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JANSR2N2484UB-Transistor Brand Info
The JANSR2N2484UB is a military-grade transistor produced under stringent quality standards by manufacturers specializing in high-reliability semiconductor devices. It is typically sourced from vendors with expertise in defense and aerospace electronics, ensuring that each unit meets rigorous testing for durability and performance. This transistor is part of a legacy series known for its hermetically sealed metal can packaging, favored in applications where long-term stability and resistance to environmental stressors such as temperature extremes and vibration are critical.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current rating is 0.8 A, which defines the peak current the transistor can safely handle during operation without damage. Staying within this limit ensures reliable switching and amplification performance.
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Can this transistor operate in high-temperature environments?
Yes, the transistor is rated for operation from -65??C up to +200??C, making it suitable for applications exposed to extreme temperature






