JANSR2N2484UB/TR N-Channel MOSFET Transistor – JANSR Brand, TO-220 Package

  • This device functions as a transistor, enabling efficient current control in electronic circuits.
  • It features a voltage rating suitable for medium power applications, ensuring stable operation under load.
  • The compact package design allows for board-space savings in densely populated circuit layouts.
  • Ideal for use in switching applications, it improves performance by providing reliable signal amplification.
  • Manufactured under controlled quality processes, it offers consistent electrical characteristics for dependable use.
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JANSR2N2484UB/TR Overview

The JANSR2N2484UB/TR is a high-performance NPN bipolar junction transistor designed for robust switching and amplification tasks in industrial electronics. It features a collector-emitter voltage rating of 80 V and a collector current capacity of 1 A, making it suitable for medium-power applications requiring reliable operation under moderate voltage and current conditions. This transistor exhibits excellent gain characteristics and low saturation voltage, enhancing efficiency in power management circuits. Its durable TO-18 metal can packaging ensures enhanced thermal stability and longevity, critical for demanding environments. For trusted semiconductor solutions, visit IC Manufacturer.

JANSR2N2484UB/TR Key Features

  • High voltage capability: With an 80 V collector-emitter voltage rating, this transistor supports a broad range of industrial switching applications requiring reliable voltage tolerance.
  • Robust current handling: Supports up to 1 A continuous collector current, enabling efficient control of moderate power loads without thermal overstress.
  • Low saturation voltage: Ensures minimal power loss during switching, improving overall circuit efficiency and reducing heat generation.
  • TO-18 metal can package: Offers superior thermal conductivity and mechanical protection, enhancing device reliability in harsh operating conditions.

JANSR2N2484UB/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Continuous Collector Current (IC) 1 A
Gain Bandwidth Product (fT) 100 MHz
DC Current Gain (hFE) 40-300 (typical range)
Power Dissipation (Ptot) 625 mW
Package Type TO-18 Metal Can

JANSR2N2484UB/TR Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage and current handling capabilities with a high gain bandwidth, outperforming many generic NPN transistors in similar power classes. Its low saturation voltage reduces energy losses, while the TO-18 metal package enhances thermal dissipation and mechanical robustness, delivering improved reliability and longer operational life when compared to plastic-encapsulated alternatives.

Typical Applications

  • Switching circuits in industrial control systems where moderate voltage and current handling are essential, benefiting from the transistor??s reliable gain and low saturation voltage to maintain efficiency and durability.
  • Audio amplification stages requiring stable gain and low distortion under variable load conditions.
  • Signal processing circuits in communication equipment, leveraging the transistor??s high gain bandwidth for improved frequency response.
  • General-purpose amplification and switching in automotive electronics where thermal stability and reliability are critical.

JANSR2N2484UB/TR Brand Info

The JANSR2N2484UB/TR is produced by IC Manufacturer, a well-established supplier specializing in industrial-grade semiconductor components. This product line focuses on delivering components that meet stringent military and industrial standards, ensuring high reliability, consistent performance, and robust packaging suitable for long-term use in demanding environments. The metal can TO-18 package is a hallmark of their commitment to durability and thermal management excellence.

FAQ

What is the maximum collector current rating of this transistor?

The device supports a maximum continuous collector current of 1 A, making it suitable for medium-power switching and amplification applications where currents remain within this limit.

What package type does this transistor use, and why is it important?

This transistor is housed in a TO-18 metal can package, which provides superior thermal conductivity and mechanical strength compared to plastic packages. This ensures better heat dissipation and increased reliability in harsh environments.

Can this transistor be used for high-frequency applications?

Yes, with a gain bandwidth product of approximately 100 MHz, it is suitable for moderate high-frequency applications such as signal processing and low-power RF amplification.

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产品中间询盘

What voltage levels can this device safely operate at?

The transistor can handle collector-emitter voltages up to 80 V and collector-base voltages up to 100 V, allowing it to function reliably in circuits with moderate voltage requirements.

How does the transistor??s low saturation voltage benefit circuit design?

Lower saturation voltage reduces the voltage drop across the transistor when it is in the ON state, minimizing power loss and heat generation. This improves overall circuit efficiency and extends the component??s operational lifespan.

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