JANSR2N2369AUB-Transistor Overview
The JANSR2N2369AUB transistor is a high-performance NPN bipolar junction transistor designed for low noise and high gain applications. It is well-suited for switching and amplification tasks in industrial and commercial electronics. This transistor offers reliable operation at collector currents up to 500mA and a maximum collector-emitter voltage of 40V, making it ideal for medium-power signal processing. Its robust design ensures stable performance across a wide temperature range, supporting demanding environments. For detailed product sourcing and technical support, visit IC Manufacturer.
JANSR2N2369AUB-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 500 mA |
| Gain Bandwidth Product (fT) | 100 MHz |
| DC Current Gain (hFE) | 70 to 300 (varies with collector current) |
| Collector-Base Voltage (VCBO) | 60 V |
| Base-Emitter Voltage (VBE) | 5 V (max) |
| Package Type | TO-18 Metal Can |
| Operating Temperature Range | -65??C to +200??C (JANSR military grade) |
JANSR2N2369AUB-Transistor Key Features
- High Gain: Provides a DC current gain up to 300, enabling efficient signal amplification with minimal distortion.
- Wide Voltage Handling: Supports collector-emitter voltages up to 40 V, suitable for medium power circuits where voltage headroom is critical.
- Low Noise Performance: Ensures cleaner signal amplification, ideal for audio and RF preamplifier stages requiring precision and clarity.
- Robust Package: The TO-18 metal can package offers superior thermal dissipation and mechanical stability, enhancing reliability in harsh conditions.
Typical Applications
- Switching and amplification in analog circuits, including audio preamplifiers and small signal RF amplifiers, where low noise and high gain are essential for signal integrity.
- Industrial control systems requiring reliable transistor switching under varying temperature and voltage conditions.
- General purpose amplification stages in communication equipment, used to boost weak signals with minimal distortion.
- Military and aerospace electronics benefiting from the device??s extended temperature range and rugged TO-18 packaging for enhanced durability.
JANSR2N2369AUB-Transistor Advantages vs Typical Alternatives
This transistor offers superior sensitivity and gain compared to many generic NPN devices, making it highly effective for precision amplification tasks. Its ability to operate at elevated temperatures and voltages with a robust metal can package provides enhanced reliability and thermal management over plastic-encapsulated alternatives. These characteristics ensure consistent performance in industrial and military applications where accuracy, longevity, and environmental tolerance are critical.
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JANSR2N2369AUB-Transistor Brand Info
The JANSR2N2369AUB is a military-grade variant of the classic 2N2369 transistor, typically manufactured under stringent quality standards by established semiconductor producers specializing in defense and industrial components. The “JAN” prefix denotes Joint Army-Navy certification, indicating compliance with rigorous performance and environmental specifications. These transistors are designed for high reliability in demanding applications, often supplied by trusted brands known for long-term availability and stringent testing protocols.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current is rated at 500mA, which allows the device to handle medium power levels suitable for switching and amplification in industrial and military circuits.
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