JANSR2N2369AUA/TR Overview
The JANSR2N2369AUA/TR is a high-performance NPN bipolar junction transistor (BJT) designed for reliable switching and amplification in industrial and commercial electronic circuits. Offering robust electrical characteristics including a maximum collector current of 0.8A and a high transition frequency, this transistor is optimized for medium power applications. It features a TO-18 metal can package that ensures enhanced thermal dissipation and durability under harsh operating conditions. Ideal for engineers and sourcing specialists seeking a dependable transistor with consistent gain and switching speed, the device supports efficient circuit design with its balanced electrical and mechanical properties. Available through IC Manufacturer, it is a proven choice for demanding signal amplification and switching tasks.
JANSR2N2369AUA/TR Key Features
- High collector current capacity: Supports up to 0.8A, enabling effective medium power handling in switching and amplification circuits.
- Enhanced frequency response: Transition frequency (fT) of 150 MHz ensures fast switching and improved signal integrity in high-speed applications.
- Robust TO-18 metal can package: Provides superior thermal conductivity and mechanical protection, increasing reliability in industrial environments.
- Stable DC current gain (hFE): Typical gain between 70 and 300 offers predictable amplification performance for consistent circuit operation.
JANSR2N2369AUA/TR Technical Specifications
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V | Maximum voltage rating |
| Collector-Base Voltage (VCBO) | 60 | V | Maximum voltage rating |
| Emitter-Base Voltage (VEBO) | 5 | V | Maximum voltage rating |
| Collector Current (IC) | 0.8 | A | Maximum continuous current |
| Power Dissipation (Ptot) | 625 | mW | At 25??C ambient temperature |
| Transition Frequency (fT) | 150 | MHz | At IC = 10 mA, VCE = 10 V |
| DC Current Gain (hFE) | 70-300 | ?? | At IC = 10 mA, VCE = 10 V |
| Junction Temperature (Tj) | +200 | ??C | Maximum operating temperature |
JANSR2N2369AUA/TR Advantages vs Typical Alternatives
This transistor offers a superior balance of medium power handling and high-frequency performance compared to typical alternatives. Its robust metal can package enhances thermal management and mechanical reliability, which is critical for industrial applications. The wide DC current gain range ensures flexible amplification without sacrificing stability, and the high transition frequency supports efficient switching in high-speed circuits. These attributes make it a practical choice for engineers seeking durable, consistent, and high-performance transistor solutions.
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Typical Applications
- Signal amplification in audio and RF circuits, benefiting from the device??s high current gain and frequency response to maintain signal clarity and strength.
- Switching elements in power management systems where reliable medium current handling is essential under varying load conditions.
- Driver stages for relays and solenoids, leveraging the transistor??s switching speed and current capacity for effective control.
- Industrial automation controls requiring robust components that withstand elevated temperatures and mechanical stress.
JANSR2N2369AUA/TR Brand Info
The JANSR2N2369AUA/TR is produced under stringent quality standards to meet aerospace and industrial reliability requirements. This product line is known for its consistent manufacturing processes and adherence to military-grade specifications, ensuring longevity and stable performance in critical applications. The device??s heritage and design emphasize ruggedness and precision, making it a trusted component for engineers designing systems where reliability and predictable electrical behavior are paramount.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current for this transistor is 0.8 amperes. This allows it to handle medium power loads effectively in both amplification and switching applications without risk of damage under specified operating conditions.
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What package type does this transistor use, and why is it beneficial?
This transistor is housed in a TO-18 metal can package. This packaging offers superior thermal dissipation and mechanical protection compared to plastic packages, making it ideal for applications requiring enhanced reliability and long-term stability.
What is the typical DC current gain and how does it affect circuit design?
The typical DC current gain (hFE) ranges from 70 to 300 at standard test conditions. This wide gain range provides flexibility in circuit design, enabling engineers to achieve desired amplification levels while maintaining stable operation.
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What frequency range is this transistor suitable for?
With a transition frequency of 150 MHz, this transistor performs well in high-speed switching and RF amplification circuits. It is suitable for applications requiring fast response and minimal signal distortion up to this frequency.
What are the maximum voltage ratings for safe operation?
The device supports a maximum collector-emitter voltage of 40 V, collector-base voltage of 60 V, and emitter-base voltage of 5 V. Staying within these limits ensures safe and reliable transistor operation without breakdown or degradation.
