JANSR2N2222AL-Transistor Overview
The JANSR2N2222AL is a robust NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Noted for its high current gain and fast switching capabilities, this transistor supports collector currents up to 800mA and a collector-emitter voltage rating of 40V. Its complementary design ensures reliable performance in industrial control systems, signal amplification, and driver circuits. The device??s TO-18 metal can package provides enhanced thermal stability and durability, making it suitable for demanding environments. Engineers and sourcing specialists will appreciate the balance of power handling and switching speed offered by this transistor, as documented by IC Manufacturer.
JANSR2N2222AL-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction |
| Collector-Emitter Voltage (Vceo) | 40 V |
| Collector Current (Ic) | 800 mA |
| Power Dissipation (Ptot) | 625 mW |
| Gain Bandwidth Product (fT) | 250 MHz |
| DC Current Gain (hFE) | 100 min (at Ic = 10 mA) |
| Transition Frequency | 250 MHz (typical) |
| Package Type | TO-18 Metal Can |
JANSR2N2222AL-Transistor Key Features
- High current handling capability: Supports collector currents up to 800mA, enabling effective drive for medium power loads and moderate switching applications.
- Fast switching speed: Transition frequency of 250 MHz ensures rapid response, critical for high-frequency amplification and switching circuits.
- Robust thermal performance: TO-18 metal can package offers improved heat dissipation and mechanical durability compared to plastic encapsulated alternatives.
- Reliable gain characteristics: Minimum DC current gain of 100 at 10mA collector current ensures consistent amplification performance across operating conditions.
Typical Applications
- General-purpose switching and amplification in industrial control systems, where reliable operation and moderate power handling are required.
- Driver circuits for relays, solenoids, and small motors, benefiting from high collector current capacity and fast switching.
- Signal amplification in audio and low-power RF circuits, leveraging the transistor??s gain bandwidth product and low noise performance.
- Interface circuits between logic-level signals and higher power loads, ensuring efficient signal translation and control.
JANSR2N2222AL-Transistor Advantages vs Typical Alternatives
This transistor offers a superior combination of current capacity and switching speed compared to many standard NPN transistors in similar packages. Its metal can package enhances thermal management and mechanical reliability, making it ideal for harsh industrial environments. With a high DC gain and transition frequency, it delivers consistent amplification and efficient switching, which typical plastic-encapsulated alternatives may lack. These features contribute to improved system robustness and signal integrity in demanding applications.
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JANSR2N2222AL-Transistor Brand Info
The JANSR2N2222AL is a military-grade variant of the widely recognized 2N2222 transistor family. It is manufactured under stringent quality controls to meet MIL-STD specifications, ensuring enhanced reliability and performance consistency. Commonly produced by established semiconductor manufacturers specializing in industrial and military components, this transistor is favored for applications requiring extended temperature ranges and ruggedized packaging. Its provenance from a reputable supplier guarantees traceability and compliance with industry standards, making it a trusted choice for engineers and sourcing professionals.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current for this device is rated at 800 milliamps, allowing it to handle moderate power loads commonly found in switching and amplification circuits without risk of damage.
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How does the TO-18 metal can package benefit performance?
The TO-18 metal can package offers enhanced thermal conductivity and mechanical protection compared to plastic packages. This improves heat dissipation during operation and increases the transistor






