JANSR2N2221AUB/TR Overview
The JANSR2N2221AUB/TR is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It offers robust electrical characteristics with a collector current rating up to 800mA and a collector-emitter voltage of 40V, making it suitable for medium power and low noise circuits. This transistor provides reliable operation in demanding industrial environments, ensuring stable gain and switching speeds. Its TO-92 package facilitates easy integration into various electronic designs. Available through IC Manufacturer, this device is ideal for engineers and sourcing specialists seeking a dependable, versatile transistor solution.
JANSR2N2221AUB/TR Key Features
- High collector current capacity: Supports up to 800mA, enabling effective handling of moderate power loads without thermal stress.
- Collector-emitter voltage rating of 40V: Allows operation in circuits with moderate voltage levels, providing design flexibility.
- Gain bandwidth product (fT) of 300MHz: Ensures fast switching and amplification, beneficial for high-frequency applications.
- Low saturation voltage: Reduces power dissipation during switching, improving overall circuit efficiency and reliability.
- Standard TO-92 package: Simplifies assembly and enhances compatibility with through-hole PCB designs.
- Consistent DC current gain (hFE): Offers gains ranging from 100 to 300, facilitating precise amplification control.
JANSR2N2221AUB/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 75 | V |
| Emitter-Base Voltage (VEBO) | 6 | V |
| Collector Current (IC) | 800 | mA |
| Power Dissipation (PC) | 625 | mW |
| Transition Frequency (fT) | 300 | MHz |
| DC Current Gain (hFE) | 100 to 300 | ?C |
| Saturation Voltage (VCE(sat)) | 1.2 (max) | V |
| Package Type | TO-92 | ?C |
JANSR2N2221AUB/TR Advantages vs Typical Alternatives
This transistor offers a balanced combination of moderate voltage and current capabilities with a high transition frequency, making it more versatile than many standard NPN BJTs. Its low saturation voltage reduces power loss during switching, enhancing efficiency. The consistent gain range ensures predictable performance across various circuit designs, providing engineers with a reliable alternative to similar transistors in industrial and general-purpose applications.
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Typical Applications
- Signal amplification in audio and low-power RF circuits, where stable gain and frequency response are critical for sound fidelity and signal integrity.
- Switching applications in control circuits, enabling efficient on/off control of loads up to 800mA in automation and instrumentation.
- Driver stages for relays, LEDs, and small motors, providing sufficient current drive capability and voltage tolerance.
- General-purpose discrete transistor functions in prototype development and educational electronics projects requiring robust and accessible BJTs.
JANSR2N2221AUB/TR Brand Info
The JANSR2N2221AUB/TR is a product offered by a leading semiconductor manufacturer known for delivering high-quality, reliable discrete components. Designed and tested to meet stringent military and industrial standards, this transistor exemplifies the brand??s commitment to durability and consistent electrical performance. It supports a wide range of applications, making it a trusted choice for engineers seeking dependable components from a reputable source.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current for this transistor is 800mA. This rating allows it to handle moderate power loads safely without risking device damage in typical switching and amplification scenarios.
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In which package is the transistor supplied?
This device comes in a TO-92 package, a common through-hole format that supports easy PCB mounting and prototyping, widely used in industrial and educational electronics.
What voltage levels can this transistor safely operate with?
The maximum collector-emitter voltage is 40V, while the collector-base voltage is rated at 75V. These ratings define the maximum voltage the transistor can endure without breakdown, suitable for medium-voltage applications.
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How does the gain of this transistor vary?
The DC current gain (hFE) ranges from 100 to 300, depending on operating conditions and testing parameters. This variability allows flexibility in amplification applications where gain requirements may differ.
Is this transistor suitable for high-frequency applications?
Yes, with a transition frequency (fT) of 300MHz, this transistor can perform effectively in high-frequency signal amplification and switching tasks, making it suitable for RF and fast digital circuits.






