JANSR2N2221AUA/TR Overview
The JANSR2N2221AUA/TR is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial and electronic systems. With a collector current rating up to 800mA and a maximum collector-emitter voltage of 40V, it provides reliable operation under demanding conditions. Its robust construction ensures enhanced durability and long-term stability, making it suitable for precision signal processing and power regulation tasks. The device is housed in a TO-18 metal can package, enabling efficient thermal management and mechanical protection. Sourced through IC Manufacturer, this transistor is ideal for engineers and sourcing specialists seeking a dependable solution for medium power applications.
JANSR2N2221AUA/TR Key Features
- High Collector Current Capability: Supports up to 800mA continuous collector current, enabling effective control of moderate power loads.
- Wide Voltage Rating: Collector-emitter voltage (Vceo) of 40V ensures versatility across various circuit designs requiring medium voltage operation.
- TO-18 Metal Can Package: Offers superior thermal dissipation and mechanical robustness compared to plastic packages, enhancing device reliability in harsh environments.
- Low Saturation Voltage: Minimizes power loss during switching, improving system efficiency and reducing thermal stress.
JANSR2N2221AUA/TR Technical Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 40 | V |
| Collector-Base Voltage (Vcbo) | 75 | V |
| Emitter-Base Voltage (Vebo) | 6 | V |
| Collector Current (Ic) | 800 | mA |
| Power Dissipation (Pc) | 500 | mW |
| Transition Frequency (fT) | 300 | MHz |
| DC Current Gain (hFE) | 100?C300 | (typical) |
| Package Type | TO-18 Metal Can | – |
JANSR2N2221AUA/TR Advantages vs Typical Alternatives
This transistor offers superior power handling and frequency response compared to many standard NPN devices. Its metal can packaging improves thermal performance and mechanical stability, critical for industrial applications where reliability under stress is essential. The combination of a high collector current rating and low saturation voltage makes it more efficient, reducing heat dissipation and extending device life. These advantages ensure dependable operation in demanding switching and amplification roles.
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Typical Applications
- Switching circuits in industrial control systems, where reliable handling of moderate currents and voltages is required for actuators and relays.
- Signal amplification in audio and sensor circuits, benefiting from the transistor??s stable gain and frequency response.
- Driver stages for power transistors or motors, leveraging its high current capacity and low saturation voltage.
- General-purpose electronic circuits requiring robust, high-gain NPN transistors with excellent thermal management.
JANSR2N2221AUA/TR Brand Info
The JANSR2N2221AUA/TR is a premium-quality transistor designed and manufactured under stringent quality standards. Its construction follows military and industrial-grade specifications, ensuring enhanced reliability and performance consistency. This product line is recognized for its durability in harsh environments, making it a preferred choice among engineers and sourcing specialists who demand dependable semiconductor components for critical applications.
FAQ
What is the maximum collector current rating of this transistor?
The transistor supports a maximum continuous collector current of 800mA. This makes it suitable for medium power switching and amplification tasks where moderate load currents are involved.
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Which package type is used for this device and why is it important?
This device is housed in a TO-18 metal can package, which provides enhanced thermal dissipation and mechanical durability. This packaging helps maintain device stability and reliability in industrial and high-temperature environments.
Can this transistor be used for high-frequency applications?
Yes, with a transition frequency of approximately 300MHz, this transistor is capable of operating effectively in moderate to high-frequency amplifier and switching circuits, suitable for RF and signal processing tasks.
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What voltage limits should be observed to avoid device damage?
The maximum collector-emitter voltage (Vceo) is 40V, the collector-base voltage (Vcbo) is 75V, and the emitter-base voltage (Vebo) is 6V. Staying within these limits ensures reliable operation and prevents breakdown or degradation.
How does this transistor compare in efficiency to other similar NPN transistors?
Due to its low saturation voltage, this transistor reduces power loss during switching, improving overall circuit efficiency. When combined with its high current rating, this results in better thermal management and longer operational life compared to many typical NPN transistors.
