JANSP2N5152L-Transistor Overview
The JANSP2N5152L transistor is a high-performance NPN bipolar junction transistor (BJT) designed for industrial and military applications requiring robust switching and amplification. It offers reliable operation under elevated stress conditions, ensuring consistent performance in power amplification, signal processing, and control circuits. The device benefits from a high maximum collector current and voltage ratings, making it suitable for demanding environments. Its sturdy construction and precise electrical characteristics make it a dependable choice for engineers focusing on durability and efficiency. For detailed sourcing and technical support, visit IC Manufacturer.
JANSP2N5152L-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 1.5 A |
| Power Dissipation (Ptot) | 625 mW (case) |
| DC Current Gain (hFE) | 30 to 70 (at IC=150 mA) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | TO-18 Metal Can |
JANSP2N5152L-Transistor Key Features
- High voltage tolerance: Rated for up to 60 V collector-emitter voltage, enabling use in medium-power applications with elevated voltage requirements.
- Robust current handling: Supports collector currents up to 1.5 A, providing reliable switching and amplification in demanding circuits.
- Wide gain range: DC current gain between 30 and 70 ensures flexibility for various amplification needs and biasing configurations.
- High transition frequency: Typical fT of 100 MHz supports fast switching and high-frequency applications.
- Durable metal TO-18 package: Provides enhanced thermal dissipation and mechanical robustness for improved reliability in industrial settings.
Typical Applications
- Power amplification stages in communication and industrial control systems requiring stable high-current gain and voltage handling capability.
- Switching elements in analog and digital circuits where reliable transistor operation under moderate power is critical.
- Signal processing circuits demanding low noise and consistent frequency response up to 100 MHz.
- Military and aerospace equipment where ruggedness and dependable performance under harsh conditions are mandatory.
JANSP2N5152L-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage rating, current capacity, and gain performance that outperforms many standard BJTs in similar TO-18 packages. Its robust metal can packaging enhances thermal management and mechanical durability, providing better reliability than plastic-encapsulated equivalents. The high transition frequency and broad current gain range enable more efficient switching and amplification, making it advantageous for precision industrial and military applications where sensitivity and long-term stability are critical.
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JANSP2N5152L-Transistor Brand Info
The JANSP2N5152L is a military-grade transistor originally specified under the Joint Army-Navy (JAN) standards, ensuring strict quality and reliability requirements. This designation indicates compliance with rigorous testing and screening for use in defense and aerospace applications. The transistor is often sourced from manufacturers specializing in high-reliability semiconductor components designed to meet or exceed MIL-STD-883 standards. Its proven pedigree and standardized performance parameters make it a trusted component for engineers sourcing devices that must maintain operational integrity in challenging environments.
FAQ
What is the maximum voltage rating for the JANSP2N5152L transistor?
The maximum collector-emitter and collector-base voltage ratings are both 60 volts. This makes the transistor suitable for medium-voltage applications where voltage spikes or steady-state voltages up to this level are expected.
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What current level can the transistor handle safely?
The device is






