The JANSP2N5152 is a high-performance NPN bipolar junction transistor (BJT) designed for switching and amplification applications. This transistor offers reliable operation with a maximum collector current of 100 mA and a collector-emitter voltage rating of 60 V, making it suitable for medium-power circuits. Its complementary PNP counterpart is widely used in amplifier output stages and switching circuits. The device features a complementary silicon construction ensuring stable gain characteristics and low saturation voltage, which enhances efficiency in signal amplification. Available in a standard TO-92 package, it is well-suited for industrial and commercial electronics requiring dependable transistor performance. For more detailed sourcing and specifications, visit IC Manufacturer.
JANSP2N5152-Transistor Technical Specifications
Parameter
Value
Units
Transistor Type
NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)
60
Volts
Collector-Base Voltage (VCBO)
75
Volts
Emitter-Base Voltage (VEBO)
5
Volts
Collector Current (IC)
100
mA
Power Dissipation (PD)
625
mW
Gain Bandwidth Product (fT)
80
MHz
DC Current Gain (hFE)
40?C320
Package Type
TO-92
JANSP2N5152-Transistor Key Features
High voltage rating: Supports up to 60 V collector-emitter voltage, enabling robust performance in medium-voltage circuits.
Moderate collector current capability: Handles up to 100 mA, suitable for switching and low-to-medium power amplification.
Wide DC current gain range: Offers gain between 40 and 320, providing flexibility in circuit design for precise amplification control.
Low power dissipation: Maximum of 625 mW allows integration in compact industrial designs without excessive thermal management.
High gain bandwidth: 80 MHz transition frequency supports moderate-speed switching and signal processing applications.
Standard TO-92 packaging: Ensures compatibility with through-hole PCB assembly and easy prototyping.
Typical Applications
General-purpose amplification in audio and control circuits requiring reliable gain and switching characteristics in low-to-medium power ranges.
Signal switching in industrial automation systems where moderate voltage and current handling is needed.
Complementary amplifier stages in analog circuits paired with PNP counterparts for push-pull configurations.
Driver stages for relays and small motors in embedded electronic control systems.
JANSP2N5152-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage capacity, current handling, and gain suitable for many industrial and commercial applications. Compared to typical alternatives, it delivers reliable operation with a broad current gain range and high gain bandwidth, enhancing switching speed and amplification accuracy. Its low power dissipation and standard TO-92 package optimize integration and thermal management, making it a preferred choice for engineers seeking dependable performance without complex cooling or board redesigns.
The JANSP2N5152 transistor is a military-grade variant of the popular 2N5152 transistor originally developed by manufacturers such as Fairchild Semiconductor and later produced by multiple semiconductor suppliers. The ??JAN?? prefix denotes compliance with Joint Army-Navy standards, indicating enhanced reliability, tighter parametric control, and suitability for defense and aerospace applications. This makes the device especially valuable where quality and ruggedness are critical. The transistor??s design and manufacturing meet stringent quality controls, ensuring consistent electrical characteristics and long-term durability in demanding environments.
