JANSP2N3636-Transistor NPN Amplifier in TO-126 Package ?C High Gain Switching Device

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • Designed with a specific voltage rating to ensure stable operation under typical electrical loads.
  • The compact package reduces board space, facilitating denser and more streamlined device layouts.
  • Ideal for use in power regulation modules, improving overall system responsiveness and stability.
  • Manufactured to meet standard reliability criteria, supporting consistent performance over time.
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JANSP2N3636-Transistor Overview

The JANSP2N3636 is a high-performance NPN bipolar junction transistor designed for switching and amplification applications. It offers robust current handling capabilities and reliable operation under various electrical stresses. Featuring a collector current rating of up to 15A and a collector-emitter voltage of 60V, this transistor is well-suited for power management in industrial and automotive circuits. The device ensures stable gain characteristics and efficient conduction with low saturation voltage, making it an ideal choice for engineers seeking dependable performance in demanding environments. Available through IC Manufacturer, it supports seamless integration into robust electronic designs.

JANSP2N3636-Transistor Technical Specifications

ParameterSpecification
TypeNPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)60 V
Collector-Base Voltage (VCBO)75 V
Emitter-Base Voltage (VEBO)5 V
Collector Current (IC)15 A
Power Dissipation (Ptot)115 W
DC Current Gain (hFE)40 to 320
Transition Frequency (fT)5 MHz
Package TypeTO-3 Metal Can

JANSP2N3636-Transistor Key Features

  • High current capacity: Supports up to 15A collector current, enabling efficient handling of power loads in high-demand switching applications.
  • Robust voltage ratings: With a collector-emitter voltage rating of 60V, it ensures reliable operation in circuits requiring moderate voltage tolerance.
  • Wide DC current gain range: Offers flexibility in amplification with hFE values between 40 and 320, suitable for diverse gain requirements.
  • Thermally efficient TO-3 package: Metal can design enhances heat dissipation, improving device reliability during prolonged operation.
  • Stable frequency response: Operates effectively up to 5 MHz, supporting medium-frequency switching and amplification tasks.

Typical Applications

  • Power switching circuits requiring high current control and efficient thermal management, such as motor drivers and relay drivers in industrial equipment.
  • Audio amplification stages where moderate voltage and current gain are essential for signal enhancement.
  • Voltage regulation and power supply modules needing robust transistor performance for reliable operation.
  • General-purpose amplification and switching in automotive electronics where durability and stable gain are critical.

JANSP2N3636-Transistor Advantages vs Typical Alternatives

This transistor delivers superior current handling and voltage tolerance compared to typical small-signal transistors, making it ideal for power-intensive applications. Its TO-3 package provides enhanced thermal dissipation, improving reliability and lifespan. The wide gain range and stable frequency response ensure versatility across switching and amplification roles, offering engineers a dependable solution that balances performance with ruggedness in industrial and automotive environments.

JANSP2N3636-Transistor Brand Info

The JANSP2N3636 is a military-grade transistor originally manufactured under the JAN (Joint Army-Navy) standard, ensuring high reliability and quality suitable for defense and aerospace applications. This device is typically produced by established semiconductor manufacturers specializing in ruggedized components. The JAN prefix signifies stringent testing and qualification standards, making it a trusted component in critical systems requiring stringent performance and environmental endurance. It is commonly sourced through authorized distributors of military and industrial-grade semiconductors.

FAQ

What voltage and current limits should I observe when using this transistor?

The device supports a collector-emitter voltage up to 60V and a maximum collector current of 15A. Staying within these limits ensures safe operation and prevents damage due to excessive voltage or current stress.

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