JANSP2N3501UB-Transistor NPN Power Transistor in TO-66 Metal Can Package by ON Semiconductor

JANSP2N3501UB-Transistor Overview

The JANSP2N3501UB-Transistor is a robust bipolar junction transistor (BJT) designed for medium-power switching and amplification applications. Featuring a PNP configuration, this device offers reliable performance with a maximum collector current of 0.5A and collector-emitter voltage rating up to 60V. Its low noise and high gain characteristics make it ideal for signal processing and amplification tasks in industrial and consumer electronics. Engineered for durability, it supports high junction temperatures and ensures stable operation under varied environmental conditions. Sourcing specialists and engineers trust this transistor for precision and consistent quality in demanding electronic circuits. Available through IC Manufacturer.

JANSP2N3501UB-Transistor Technical Specifications

JANSP2N3501UB-Transistor Key Features

• High Current Gain: Enables efficient signal amplification, reducing the need for multiple transistor stages and improving circuit simplicity.
• Moderate Power Dissipation: Supports up to 625mW, allowing for reliable operation in medium-power switching applications without extensive heat sinking.
• Wide Voltage Range: With a collector-emitter voltage rating of 60V, it is suitable for a variety of low to medium voltage circuits.
• Compact TO-92 Package: Facilitates easy PCB mounting and integration in space-constrained designs.
• High Transition Frequency: The 100MHz transition frequency supports high-speed switching and amplification in analog and digital circuits.

Typical Applications

• Signal amplification in audio and low-frequency analog circuits requiring stable gain and low noise performance.
• Switching controls in industrial automation systems where moderate current and voltage handling are essential.
• General-purpose low-power switching for relay drivers, LED drivers, and small motor control circuits.
• Complementary transistor stages in push-pull amplifier configurations for improved efficiency and linearity.

JANSP2N3501UB-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of current gain, voltage rating, and power dissipation that outperforms many generic BJTs in the same class. Its high transition frequency and low noise characteristics provide enhanced signal integrity and faster switching capabilities compared to typical alternatives. The TO-92 package ensures easy integration without sacrificing thermal performance, making it a reliable choice for engineers demanding precision and durability in medium power applications.

JANSP2N3501UB-Transistor Brand Info

The JANSP2N3501UB is a product variant commonly associated with established semiconductor manufacturers who specialize in discrete bipolar transistors. It adheres to military and industrial quality standards, often indicated by the ??JAN?? prefix which historically denotes Joint Army-Navy grade components. This ensures rigorous testing for reliability and performance in harsh environments, making it suitable for aerospace, defense, and industrial electronics markets. The transistor is produced by trusted suppliers known for long-term availability and consistent quality, supporting critical applications worldwide.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current rating for this transistor is 0.5 amperes. This specification ensures the device can handle moderate current loads typical in switching