JANSP2N3501UB/TR N-Channel MOSFET Transistor in TO-220 Package by JANSP

  • JANSP2N3501UB/TR functions as a high-performance transistor, enabling efficient signal amplification in circuits.
  • It features a voltage rating suitable for general switching applications, ensuring safe operation under varying electrical loads.
  • The device comes in a compact package, offering board-space savings for densely populated electronic designs.
  • Ideal for use in power management modules where reliable switching enhances overall system efficiency.
  • Manufactured under strict quality controls to maintain consistent performance and long-term reliability in diverse environments.
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产品上方询盘

JANSP2N3501UB/TR Overview

The JANSP2N3501UB/TR is a high-performance NPN bipolar junction transistor designed for industrial and electronic applications requiring robust switching and amplification capabilities. This transistor offers reliable operation with a collector-emitter voltage rating suitable for medium power circuits. Its optimized gain characteristics and low saturation voltage facilitate efficient signal control, making it ideal for use in power regulation, motor control, and driver circuits. Sourced from a trusted supplier, the device ensures consistency in quality and performance, supporting engineers and sourcing specialists in demanding environments. For comprehensive semiconductor solutions, visit IC Manufacturer.

JANSP2N3501UB/TR Key Features

  • High Collector-Emitter Voltage (Vceo): Enables operation in circuits with voltages up to 60V, ensuring durability in medium power applications.
  • Moderate Continuous Collector Current: Supports currents up to 4A, allowing efficient switching in motor drivers and power regulators.
  • Low Saturation Voltage: Minimizes power loss during conduction phases, improving overall circuit efficiency and thermal management.
  • Complementary to PNP Devices: Facilitates balanced push-pull amplifier configurations and complex switching circuits.

JANSP2N3501UB/TR Technical Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage Vceo 60 V
Collector-Base Voltage Vcbo 80 V
Emitter-Base Voltage Vebo 5 V
Continuous Collector Current Ic 4 A
Collector Dissipation Pc 30 W
DC Current Gain (hFE) hFE 10 to 70 ?C
Transition Frequency ft 30 MHz
Operating Junction Temperature Tj 150 ??C

JANSP2N3501UB/TR Advantages vs Typical Alternatives

The JANSP2N3501UB/TR stands out for its combination of high voltage rating and substantial collector current capacity, offering superior power handling compared to typical low-power transistors. Its moderate gain range and low saturation voltage contribute to efficient switching and amplification with reduced thermal stress. This makes it a reliable choice for industrial applications where durability and consistent performance are critical, outperforming alternatives that may compromise on voltage tolerance or current handling.

Typical Applications

  • Power switching and amplification in industrial motor control systems, providing reliable operation under variable load conditions and voltage stresses.
  • Voltage regulation circuits requiring stable transistor operation at medium power levels.
  • Driver stages for relay and solenoid control, benefiting from the transistor??s ability to handle moderate current loads.
  • Complementary push-pull amplifier circuits, enabling balanced signal amplification in audio and control systems.

JANSP2N3501UB/TR Brand Info

This transistor is part of a specialized semiconductor product line designed to meet the rigorous demands of industrial and electronic system designs. Manufactured with stringent quality controls, it delivers dependable performance for a wide range of switching and amplification tasks. The brand behind this device is known for extensive portfolio support, ensuring engineers have access to components that comply with industry standards and facilitate seamless integration into complex systems.

FAQ

What is the maximum collector current rating of this transistor?

The device can handle a continuous collector current of up to 4 Amperes, making it suitable for medium power applications such as motor control and power regulation circuits.

Can this transistor be used in high-frequency circuits?

With a transition frequency of approximately 30 MHz, this transistor is capable of operation in moderately high-frequency applications, though it is primarily optimized for switching and amplification in industrial systems.

What voltage levels can this transistor safely operate at?

The maximum collector-emitter voltage rating is 60 Volts, while the collector-base voltage can go up to 80 Volts, allowing use in circuits operating at these voltage levels without risk of breakdown.

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产品中间询盘

Is this transistor suitable for complementary amplifier configurations?

Yes, it is complementary to certain PNP transistors, enabling its use in push-pull amplifier stages for balanced signal processing in audio and other control applications.

What thermal considerations should be accounted for when using this device?

The transistor supports an operating junction temperature up to 150??C and a collector dissipation rating of 30 Watts, so appropriate heat sinking and thermal management are recommended to maintain reliable operation.

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