JANSP2N3500L-Transistor by JANSP2 | High-Power Switching Transistor | TO-220 Package

  • Operates as a transistor to control current flow, enabling efficient switching in electronic circuits.
  • Features a voltage rating that ensures safe operation under specified electrical conditions.
  • Its compact package design supports board-space savings in dense circuit layouts.
  • Suitable for use in power regulation applications, providing stable performance in varied environments.
  • Manufactured to meet reliability standards, ensuring consistent function over extended use.
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JANSP2N3500L-Transistor Overview

The JANSP2N3500L-Transistor is a high-voltage, NPN bipolar junction transistor designed for robust switching and amplification tasks in industrial and power applications. Featuring a collector-emitter voltage rating of 350V and a collector current capacity of 2A, this device provides reliable performance under demanding electrical conditions. Its complementary structure supports efficient power handling, making it suitable for use in high-voltage amplifiers, switching regulators, and driver circuits. Engineers and sourcing specialists benefit from its rugged construction and consistent electrical characteristics, ensuring dependable operation in various industrial environments. For detailed sourcing and additional technical data, visit IC Manufacturer.

JANSP2N3500L-Transistor Key Features

  • High Voltage Handling: Supports a maximum collector-emitter voltage of 350V, allowing operation in high-voltage circuits without breakdown risk.
  • Robust Collector Current: Capable of continuous collector current up to 2A, enabling effective switching and amplification in power applications.
  • Complementary NPN Structure: Facilitates integration in push-pull amplifier and switching configurations for balanced circuit design.
  • Low Saturation Voltage: Ensures efficient conduction with minimal power loss, improving overall circuit efficiency.
  • High Gain Bandwidth Product: Provides enhanced frequency response, suitable for amplifier and signal processing stages.
  • Reliable Thermal Performance: Designed to maintain stability under typical operating temperatures, promoting long-term reliability.

JANSP2N3500L-Transistor Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCE)350V
Collector-Base Voltage (VCB)350V
Emitter-Base Voltage (VEB)5V
Collector Current (IC)2A
DC Current Gain (hFE)20?C70?C
Power Dissipation (Ptot)30W
Transition Frequency (fT)2MHz
Storage and Operating Temperature Range-65 to +200??C

JANSP2N3500L-Transistor Advantages vs Typical Alternatives

This transistor offers superior high-voltage performance and a robust collector current rating compared to many standard NPN devices, making it well-suited for demanding industrial power applications. Its lower saturation voltage reduces power dissipation and thermal stress, enhancing overall circuit efficiency and reliability. The complementary design simplifies integration in amplifier and switching circuits, providing engineers with a versatile and dependable solution over typical low-voltage or lower-current transistors.

Typical Applications

  • High-voltage switching circuits, including power supply regulators that require reliable handling of voltages up to 350V and continuous currents of 2A for efficient power control.
  • Audio power amplifier stages where high voltage and current capability contribute to improved signal amplification performance.
  • Industrial motor control circuits that benefit from the transistor??s ruggedness and stable gain across a wide temperature range.
  • General-purpose amplification and driver circuits in industrial electronics, leveraging its high gain and frequency response.

JANSP2N3500L-Transistor Brand Info

The JANSP2N3500L-Transistor is manufactured under a stringent quality process to meet military and industrial standards, ensuring consistent electrical properties and durability. This product is part of a family of power transistors designed with a focus on reliability and performance in harsh environments. The brand emphasizes compliance with industry norms, making it a trusted choice for engineers seeking dependable semiconductor components for high-voltage and high-power applications.

FAQ

What is the maximum collector-emitter voltage rating of this transistor?

The maximum collector-emitter voltage rating is 350 volts, which allows the transistor to operate safely in high-voltage circuits without risk of breakdown, making it suitable for power amplification and switching applications.

Can this transistor handle continuous high current loads?

Yes, the device supports a continuous collector current of up to 2 amperes, ensuring it can manage substantial current loads typical in industrial and power electronics applications.

What temperature range is this transistor rated for?

This transistor is designed to operate and be stored within a temperature range from -65??C to +200??C, which supports its use in environments with extreme thermal conditions.

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How does the transistor??s gain affect its application?

The DC current gain ranges from 20 to 70, which influences the amplification factor and switching efficiency, providing designers with flexibility to tailor performance in signal processing and power stages.

Is this transistor suitable for audio amplifier circuits?

Yes, its high voltage and current handling capabilities, combined with a reasonable transition frequency of 2 MHz, make it well-suited for audio power amplifier applications requiring reliable amplification and thermal stability.

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