JANSP2N3439UA-Transistor NPN Bipolar Junction Transistor in TO-92 Package by JAN

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • Featuring a high voltage rating, it ensures stable performance under demanding electrical conditions.
  • The compact package design offers board-space savings, ideal for dense circuit layouts.
  • Commonly used in switching applications, it enhances response time and overall system efficiency.
  • Manufactured to meet strict quality standards, it delivers consistent reliability over extended use.
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JANSP2N3439UA-Transistor Overview

The JANSP2N3439UA is a high-performance NPN bipolar junction transistor engineered for industrial and power switching applications. Designed to handle substantial collector currents and voltages, it provides reliable operation in demanding environments. With its robust electrical characteristics and TO-3 metal can packaging, this transistor ensures excellent thermal dissipation and mechanical durability. It is well-suited for use in amplifier circuits, power regulators, and switching devices requiring stable gain and high current capability. For detailed sourcing and technical support, visit IC Manufacturer.

JANSP2N3439UA-Transistor Technical Specifications

Parameter Specification Unit
Collector-Emitter Voltage (VCEO) 160 V
Collector-Base Voltage (VCBO) 200 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 15 A
Power Dissipation (PD) 115 W
DC Current Gain (hFE) 15 to 60 ??
Transition Frequency (fT) 4 MHz
Package Type TO-3 Metal Can ??

JANSP2N3439UA-Transistor Key Features

  • High collector current capacity: Supports up to 15 A, enabling efficient handling of power loads in industrial circuits.
  • Robust voltage ratings: Collector-emitter voltage rating of 160 V ensures reliable operation in high-voltage switching applications.
  • Durable TO-3 metal can package: Provides superior thermal dissipation and mechanical strength for enhanced reliability in harsh environments.
  • Wide DC current gain range: Offers flexibility in circuit design with gain values between 15 and 60, facilitating stable amplification performance.

Typical Applications

  • Power amplifiers in industrial audio and signal processing systems requiring high current and voltage handling.
  • Switching regulators and power supply circuits where robust transistor switching is critical for efficiency.
  • Motor control circuits that demand reliable and durable transistors for load driving and switching.
  • General-purpose power switching applications in industrial automation and control equipment.

JANSP2N3439UA-Transistor Advantages vs Typical Alternatives

This transistor offers a combination of high current capacity and elevated voltage ratings that surpass many general-purpose transistors. Its TO-3 package delivers superior heat dissipation compared to plastic encapsulated devices, enhancing operational stability and longevity. The wide gain range and robust construction make it a preferred choice for demanding industrial power applications where reliability and consistent performance are paramount.

JANSP2N3439UA-Transistor Brand Info

The JANSP2N3439UA is a military-grade transistor variant derived from the well-established 2N3439 transistor series. It is typically supplied under JAN (Joint Army-Navy) specifications, ensuring stringent quality and reliability standards for defense and industrial markets. This product adheres to rigorous screening and testing protocols to meet high-reliability requirements, making it suitable for critical applications where failure is not an option. The transistor is manufactured by reputable semiconductor producers who specialize in power transistor solutions for harsh environments.

FAQ

What is the maximum collector current supported by this transistor?

The device supports a maximum collector current of 15 amperes, making it suitable for high-power switching and amplification tasks in industrial circuits.

What type of package does this transistor use and why is it important?

This transistor is housed in a TO-3 metal can package

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