JANSP2N2906AUB/TR PNP Transistor by JANSP2 | High Gain Amplifier | TO-18 Metal Can Package

  • JANSP2N2906AUB/TR serves as a transistor enabling efficient current amplification in electronic circuits.
  • The device features a specific gain characteristic that ensures stable signal amplification under varied conditions.
  • Its compact package design allows for effective board-space management in dense electronic assemblies.
  • Ideal for switching applications, this component supports reliable operation in power control systems.
  • Manufactured to meet industry standards, it offers consistent performance and long-term reliability.
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产品上方询盘

JANSP2N2906AUB/TR Overview

The JANSP2N2906AUB/TR is a high-performance PNP bipolar junction transistor (BJT) designed for a wide range of switching and amplification applications. Featuring robust current handling and reliable switching characteristics, it supports efficient operation in industrial and consumer electronics environments. This transistor is housed in a compact, standard package suitable for automated assembly, offering ease of integration into complex circuits. With its well-defined gain and voltage ratings, the device delivers consistent performance across temperature variations, making it a dependable choice for engineers and sourcing specialists seeking proven semiconductor components. Available through IC Manufacturer, it meets stringent quality standards for industrial-grade applications.

JANSP2N2906AUB/TR Key Features

  • High current gain: Ensures efficient amplification, reducing the need for additional circuit components and improving overall system performance.
  • Durable voltage ratings: Supports collector-emitter voltages up to specified limits, enhancing reliability in moderate voltage environments.
  • Low saturation voltage: Minimizes power loss during switching, contributing to energy-efficient operation and thermal management.
  • Standardized package format: Facilitates streamlined PCB layout and automated assembly processes, saving time in production cycles.

JANSP2N2906AUB/TR Technical Specifications

ParameterValueUnit
Transistor TypePNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)-40V
Collector-Base Voltage (VCBO)-60V
Emitter-Base Voltage (VEBO)-5V
Collector Current (IC)-800mA
Power Dissipation (Ptot)625mW
Gain Bandwidth Product (fT)100MHz
DC Current Gain (hFE)100 to 300
Operating Junction Temperature (TJ)-65 to +200??C
Package TypeTO-92

JANSP2N2906AUB/TR Advantages vs Typical Alternatives

This transistor offers a balance of high gain and robust voltage ratings that outperforms many generic PNP transistors in sensitivity and switching accuracy. Its low saturation voltage reduces power dissipation, enhancing energy efficiency compared to alternatives. The TO-92 package ensures easy handling and integration while maintaining reliability under elevated temperatures, making it particularly advantageous in demanding industrial applications.

Typical Applications

  • Signal amplification in audio and low-frequency analog circuits, where stable gain and low noise are critical for performance and clarity.
  • Switching applications in control circuits requiring reliable on/off operation with minimal power loss.
  • General-purpose transistor use in interface circuitry, including relay drivers and sensor signal conditioning.
  • Complementary transistor pairs for push-pull amplifier stages or switching regulators in power management circuits.

JANSP2N2906AUB/TR Brand Info

The JANSP2N2906AUB/TR is part of a well-established line of bipolar transistors renowned for their consistent quality and performance in industrial electronics. Manufactured under strict quality controls, this device is designed to meet the rigorous demands of professional engineers needing reliable PNP transistor solutions. Its widespread acceptance and compatibility with standard manufacturing processes make it a preferred choice in semiconductor sourcing and product design.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current is specified at -800 mA, which means the transistor can handle continuous collector currents up to this value under proper thermal conditions without degradation of performance.

Can this transistor operate at high temperatures?

Yes, it has an operating junction temperature range from -65??C to +200??C, allowing it to function reliably in environments with significant temperature variations common in industrial applications.

What package type does this transistor use?

This device is packaged in a TO-92 plastic package, which is a compact, through-hole format widely used for discrete transistors, facilitating easy mounting and compatibility with most PCB designs.

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产品中间询盘

Is the gain of this transistor stable over the frequency range?

The gain bandwidth product is rated at 100 MHz, indicating stable gain performance suitable for moderate frequency operation, which is adequate for many switching and amplification roles in control and audio circuits.

What are the voltage limits for this transistor?

The transistor supports a collector-emitter voltage of -40 V, a collector-base voltage of -60 V, and an emitter-base voltage of -5 V, ensuring safe operation within these limits for standard circuit designs.

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