JANSP2N2222AUA-Transistor Overview
The JANSP2N2222AUA transistor is a robust NPN bipolar junction transistor widely used for switching and amplification in industrial and commercial electronic circuits. Designed for high current gain and fast switching speed, it provides reliable performance in low to medium power applications. Its versatility makes it suitable for a broad range of uses including signal amplification, driver stages, and general-purpose switching tasks. Sourced from a reputable IC Manufacturer, this transistor ensures consistent electrical characteristics and dependable operation in demanding environments.
JANSP2N2222AUA-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 800 mA |
| Power Dissipation (Ptot) | 625 mW (Maximum) |
| Gain Bandwidth Product (fT) | 250 MHz |
| DC Current Gain (hFE) | 100 to 300 (varies by operating point) |
| Transition Frequency | Up to 300 MHz |
| Operating Temperature Range | -55??C to +150??C |
JANSP2N2222AUA-Transistor Key Features
- High Current Handling: Supports collector currents up to 800 mA, enabling effective switching and amplification in medium power applications.
- Wide Voltage Range: With a 40 V collector-emitter voltage rating, it suits diverse circuit requirements, enhancing design flexibility.
- Fast Switching Speed: Transition frequencies up to 300 MHz allow for efficient high-speed switching in signal processing tasks.
- Robust Thermal Performance: Operating temperature range from -55??C to +150??C ensures reliability in harsh industrial environments.
Typical Applications
- Signal amplification in audio and radio frequency circuits, providing clear and stable gain for various signal levels.
- General-purpose switching in power management and control circuits, enabling efficient on/off control of loads.
- Driver stages for relays, LEDs, and other semiconductor devices, facilitating precise control in embedded systems.
- Low noise amplification in sensor interfaces and instrumentation, enhancing signal integrity for measurement accuracy.
JANSP2N2222AUA-Transistor Advantages vs Typical Alternatives
This transistor offers a compelling combination of high current capability and fast switching speed compared to typical small-signal BJTs. Its robust voltage rating and broad operating temperature range provide enhanced reliability for industrial applications. The consistent current gain and low power dissipation contribute to efficient circuit design, making it a preferred choice over generic transistors that may lack this balance of performance and durability.
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JANSP2N2222AUA-Transistor Brand Info
The JANSP2N2222AUA transistor is manufactured under a JAN (Joint Army-Navy) specification, ensuring military-grade quality and strict adherence to reliability standards. This device is recognized for its rugged construction and long-term performance stability, widely used in defense and aerospace sectors as well as industrial applications. Its legacy as a dependable transistor makes it a trusted component in designs requiring stringent quality assurance and environmental resilience.
FAQ
What is the maximum collector current for the JANSP2N2222AUA transistor?
The maximum collector current is rated at 800 mA, allowing the transistor to handle moderate current loads suitable for switching and amplification in various circuits.
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Can this transistor operate in high-temperature environments?
Yes, it supports an operating temperature range from -55??C up to +150??C, making it suitable for demanding industrial and military applications where thermal stability is critical.
Is the JANSP2N2222AUA suitable for RF applications?
Its transition frequency of up to 300 MHz and gain bandwidth product around 250 MHz






