JANSP2N2222A-Transistor NPN Amplifier Switch, TO-18 Metal Can Package by JAN

  • This transistor amplifies or switches electronic signals, enabling efficient control in circuits.
  • Its switching speed supports responsive performance, crucial for timing-sensitive applications.
  • The compact package reduces board space, facilitating dense circuit designs.
  • Ideal for general-purpose amplification in audio or signal processing devices, enhancing clarity and control.
  • Manufactured with quality standards that ensure consistent operation and long-term reliability.
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JANSP2N2222A-Transistor Overview

The JANSP2N2222A-Transistor is a robust NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Known for its reliable performance under military and industrial standards, this transistor offers stable operation with a collector current rating suitable for medium power loads. Its complementary features include low saturation voltage and fast switching speed, making it an ideal choice for signal amplification, driver stages, and interface circuits. Sourced from a trusted IC Manufacturer, this transistor meets stringent quality requirements and ensures consistent performance in demanding environments.

JANSP2N2222A-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 40 V (max)
Collector-Base Voltage (VCBO) 75 V (max)
Emitter-Base Voltage (VEBO) 6 V (max)
Collector Current (IC) 800 mA (max)
DC Current Gain (hFE) 100 to 300 (at IC = 150 mA)
Transition Frequency (fT) 300 MHz (typical)
Power Dissipation (Ptot) 625 mW (max)
Package Type TO-18 Metal Can

JANSP2N2222A-Transistor Key Features

  • High collector current capability: Supports up to 800 mA, enabling effective switching of moderate loads with ease.
  • Wide voltage ratings: With a collector-emitter voltage limit of 40 V and collector-base voltage up to 75 V, it suits various circuit voltages safely.
  • Fast transition frequency: Around 300 MHz, ensuring reliable switching performance in high-frequency applications.
  • Stable gain characteristics: DC current gain ranging between 100 and 300 enhances amplification accuracy for analog signal processing.

Typical Applications

  • Switching and amplification in signal processing circuits requiring medium power handling and fast response times.
  • Driver stage components in relay, lamp, and LED switching circuits where reliable current control is essential.
  • General-purpose low noise amplifier circuits in audio and instrumentation systems.
  • Interface circuits bridging logic-level inputs to higher power loads in industrial control systems.

JANSP2N2222A-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage and current ratings with fast switching speed, which many alternatives may lack at similar power levels. Its robust TO-18 metal can package enhances thermal dissipation and reliability in harsh environments. The wide DC current gain range provides flexibility across various circuit designs, improving efficiency and accuracy compared to generic transistors without military-grade specifications.

JANSP2N2222A-Transistor Brand Info

The JANSP2N2222A is a version of the widely recognized 2N2222A transistor, originally standardized by JEDEC and manufactured by multiple semiconductor suppliers, often under stringent military or industrial standards. The ??JAN?? prefix indicates compliance with Joint Army-Navy (JAN) military specifications, ensuring enhanced reliability, ruggedness, and consistency in performance. This makes it a preferred choice for defense, aerospace, and high-reliability industrial applications. The metal TO-18 package further supports its use in temperature-sensitive or harsh operating conditions.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current is rated at 800 milliamps, allowing the transistor to handle moderate power loads effectively in switching and amplification tasks.

Which package type does this transistor use and why is it important?

This transistor is housed in

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