JANSM2N5153L-Transistor NPN General Purpose Amplifier in TO-92 Package

  • This transistor enables efficient switching and amplification, improving overall circuit performance.
  • It features a voltage rating that ensures stable operation under varying electrical conditions.
  • The compact package design offers board-space savings, facilitating integration into dense layouts.
  • Ideal for signal processing in electronic devices, it supports reliable control of current flow.
  • Manufactured to meet industry standards, it provides consistent performance and long-term reliability.
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JANSM2N5153L-Transistor Overview

The JANSM2N5153L is a high-performance NPN bipolar junction transistor designed for medium power switching and amplification applications. Featuring robust voltage and current handling capabilities, it offers reliable operation in a variety of industrial and electronic environments. This transistor provides a stable DC current gain, making it suitable for signal amplification and switching circuits where consistent performance is critical. With a collector-emitter voltage rating of 60V and collector current up to 600mA, it supports moderate power applications with efficient switching characteristics. For detailed sourcing and technical support, visit IC Manufacturer.

JANSM2N5153L-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCE) 60 V
Collector Current (IC) 600 mA
DC Current Gain (hFE) 40 to 300 (depending on collector current)
Power Dissipation (Ptot) 625 mW
Transition Frequency (fT) 80 MHz (typical)
Base-Emitter Voltage (VBE) 1.2 V (max)
Package Type TO-18 Metal Can
Operating Junction Temperature (TJ) -65??C to +200??C

JANSM2N5153L-Transistor Key Features

  • High Voltage and Current Handling: Supports up to 60V collector-emitter voltage and 600mA collector current, enabling use in moderate power switching and amplification tasks.
  • Wide DC Current Gain Range: Offers a broad gain range from 40 to 300, allowing versatility in different gain requirements and circuit configurations.
  • Reliable Thermal Performance: With a maximum junction temperature up to 200??C and 625mW power dissipation, it maintains stable operation under demanding thermal conditions.
  • Fast Switching Frequency: Transition frequency of 80 MHz supports efficient high-speed switching applications, enhancing signal integrity in digital circuits.

Typical Applications

  • General-purpose amplification in audio and low-frequency signal processing circuits, where moderate gain and power handling are required.
  • Switching applications in industrial control systems that demand reliable transistor switching at medium voltage and current levels.
  • Driver stages for relays and solenoids, benefiting from the transistor??s ability to handle 600mA collector current safely.
  • Interface circuits in instrumentation and sensor modules, leveraging the device??s stable gain and switching speed for accurate signal conditioning.

JANSM2N5153L-Transistor Advantages vs Typical Alternatives

This transistor delivers a balanced combination of voltage, current, and frequency characteristics that make it superior to many standard NPN transistors in similar applications. Its high junction temperature rating and robust power dissipation provide enhanced reliability in industrial environments. The broad DC current gain range allows flexible circuit design, while the moderate power handling ensures efficient switching without compromising longevity. Overall, it offers a dependable solution with improved thermal and electrical stability compared to generic alternatives.

JANSM2N5153L-Transistor Brand Info

The JANSM2N5153L is a product historically associated with military and industrial-grade semiconductor manufacturing standards. These transistors typically originate from legacy semiconductor manufacturers specialized in high-reliability discrete components. The JANSM prefix reflects compliance with stringent JAN (Joint Army-Navy) military standards, ensuring durability and performance under harsh environmental conditions. Such components are often sourced from manufacturers with long-standing expertise in transistor fabrication, emphasizing quality, consistent electrical characteristics, and rugged packaging such as the TO-18 metal can.

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