JANSM2N3700UB/TR MOSFET Transistor by JANSM2 | N-Channel, TO-220 Package

  • Provides efficient MOSFET switching to improve power management in electronic circuits.
  • Features a low on-resistance, reducing power loss and enhancing overall device efficiency.
  • Compact package design minimizes board space, supporting dense circuit layouts.
  • Suitable for power supply regulation in consumer electronics, ensuring stable performance.
  • Manufactured to meet standard reliability tests, ensuring consistent operation in various conditions.
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产品上方询盘

JANSM2N3700UB/TR Overview

The JANSM2N3700UB/TR is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Engineered to deliver reliable operation under a variety of industrial conditions, this transistor offers robust voltage and current ratings suitable for medium-power circuits. Its complementary features include low noise and stable gain characteristics, making it ideal for precision analog designs and switching tasks. Sourced from a trusted IC Manufacturer, this device supports efficient thermal management and consistent performance across a broad temperature range, ensuring durability in demanding environments.

JANSM2N3700UB/TR Key Features

  • High Voltage Handling: With a collector-emitter voltage rating of 60V, it supports circuits requiring significant voltage swings without breakdown risk.
  • Moderate Current Capacity: The device can handle up to 200mA collector current, enabling efficient switching and amplification in medium-power applications.
  • Low Noise Operation: Its low noise figure enhances signal integrity, particularly in audio and RF amplifier circuits.
  • Stable Gain Characteristics: Featuring a DC current gain (hFE) typically between 40 and 300, it provides predictable amplification performance.
  • Robust Package: Packaged in a TO-18 metal can, the transistor offers superior heat dissipation and mechanical durability.
  • Wide Operating Temperature Range: Suitable for industrial temperature ranges, ensuring reliable operation in harsh environments.

JANSM2N3700UB/TR Technical Specifications

Parameter Specification Units
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 200 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 40 to 300 ??
Transition Frequency (fT) 100 MHz
Operating Temperature Range -65 to +200 ??C

JANSM2N3700UB/TR Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage handling and current capacity that outperforms many standard general-purpose NPN transistors. Its extended operating temperature range and robust TO-18 packaging provide enhanced reliability in industrial settings. With a wide gain range and low noise output, it is particularly advantageous in precision amplification applications where signal integrity is critical. These characteristics make it a strong candidate for designs demanding durability and stable performance.

Typical Applications

  • Analog signal amplification in audio and instrumentation circuits, benefiting from low noise and stable gain.
  • Switching elements in medium-power control systems requiring reliable transistor operation up to 200mA.
  • Driver stages in power supply and voltage regulator circuits due to its robust voltage ratings.
  • Industrial and automotive electronics operating under wide temperature ranges and harsh environmental conditions.

JANSM2N3700UB/TR Brand Info

The JANSM2N3700UB/TR is a product from a reputable semiconductor manufacturer known for delivering high-quality discrete components for industrial and commercial electronics. This transistor is part of a legacy series designed to meet stringent performance and reliability standards, backed by thorough testing and quality control. Its availability in a TO-18 sealed metal can package reflects a focus on durability and thermal efficiency, aligning with the brand??s commitment to supporting demanding engineering applications worldwide.

FAQ

What is the maximum collector current rating for this transistor?

The device can handle a maximum collector current of 200mA, making it suitable for medium-power switching and amplification tasks within this current range.

What type of package does this transistor come in, and why is it important?

It is supplied in a TO-18 metal can package, which offers excellent heat dissipation and mechanical robustness, ensuring stable operation in demanding thermal and physical environments.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency (fT) of approximately 100MHz, it is capable of functioning effectively in moderate high-frequency circuits such as RF amplifiers and drivers.

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产品中间询盘

What is the range of DC current gain (hFE) for this transistor?

The DC current gain typically ranges from 40 to 300, providing flexibility in amplification levels depending on the specific operating conditions and biasing.

Is the device suitable for operation in extreme temperatures?

Yes, it supports an operating temperature range from -65??C up to +200??C, making it ideal for industrial and automotive environments that require reliable performance under wide temperature variations.

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