JANSM2N3636-Transistor High-Power Amplifier Transistor in TO-3 Package by JAN

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • It features a voltage rating that ensures stable operation under varying electrical conditions.
  • The compact package reduces board space, facilitating denser and more efficient circuit designs.
  • Ideal for use in power regulation modules, it supports consistent performance under load.
  • Manufactured to meet standard quality controls, it offers dependable long-term reliability.
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JANSM2N3636-Transistor Overview

The JANSM2N3636 is a high-performance NPN silicon transistor designed for use in switching and amplifier applications. Known for its reliable electrical characteristics, this transistor delivers a collector current (Ic) rating of up to 10A and a collector-emitter voltage (Vce) maximum of 80V, making it suitable for medium power operations. Its robust gain bandwidth product and high gain values ensure efficient signal amplification with minimal distortion. Engineers and sourcing specialists can depend on this device for stable operation in demanding industrial environments. The IC Manufacturer provides this transistor with consistent quality and detailed datasheet support for seamless integration into electronic designs.

JANSM2N3636-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vce) 80 V
Collector-Base Voltage (Vcb) 100 V
Emitter-Base Voltage (Veb) 7 V
Collector Current (Ic) 10 A
Power Dissipation (Pc) 75 W
Gain Bandwidth Product (fT) 3 MHz
DC Current Gain (hFE) 20 to 70 ??
Transition Frequency (ft) 3 MHz
Operating Temperature Range -65 to +200 ??C

JANSM2N3636-Transistor Key Features

  • High Collector Current Capacity: Supports up to 10A, enabling handling of medium power loads efficiently without thermal degradation.
  • Robust Voltage Ratings: Collector-Emitter voltage of 80V and Collector-Base voltage of 100V provide strong tolerance against voltage spikes, enhancing circuit reliability.
  • Wide Operating Temperature Range: Operates reliably from -65??C to +200??C, suitable for harsh industrial environments and extreme temperature conditions.
  • Consistent DC Current Gain: Gain between 20 to 70 ensures stable amplification performance across varying operating points.
  • Moderate Gain Bandwidth: Bandwidth of 3 MHz supports a balance between switching speed and amplification, fitting typical analog and switching circuits.
  • High Power Dissipation: 75W power rating allows this transistor to sustain high power applications without overheating.

Typical Applications

  • Power Amplifiers: Ideal for medium power audio and RF amplification where stable gain and high current handling are required.
  • Switching Circuits: Suitable for industrial switching applications due to its high voltage and current ratings.
  • Motor Control: Used in controlling small to medium DC motors where reliable switching and power dissipation are critical.
  • Voltage Regulators: Can be integrated into linear regulator circuits to manage voltage levels effectively in power supplies.

JANSM2N3636-Transistor Advantages vs Typical Alternatives

This transistor stands out with its high current and voltage capabilities combined with a wide operating temperature range, offering superior reliability compared to typical low-power transistors. Its ability to dissipate up to 75W allows for robust performance in demanding power amplification and switching roles. The moderate gain and bandwidth optimize the balance between speed and amplification quality, making it a versatile choice. These factors contribute to enhanced circuit stability, efficiency, and durability, differentiating it in industrial and commercial electronics applications.

JANSM2N3636-Transistor Brand Info

The JANSM2N3636 is produced under the JAN (Joint Army-Navy) military specification, reflecting a high standard of quality and reliability demanded by defense and aerospace sectors. This device is often supplied by manufacturers specializing in ruggedized semiconductor components compliant with

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