JANSM2N3634L-Transistor NPN Amplifier Transistor in TO-92 Package by JAN Semiconductor

  • This transistor amplifies electrical signals, enabling improved control in electronic circuits.
  • Offers stable operation at specified voltage and current levels, ensuring consistent performance.
  • Encased in a compact package that saves board space and simplifies assembly processes.
  • Ideal for switching applications in power management, enhancing efficiency in device operation.
  • Manufactured under strict quality controls to provide reliable and long-lasting component performance.
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JANSM2N3634L-Transistor Overview

The JANSM2N3634L is a high-voltage NPN bipolar junction transistor designed for robust switching and amplification in industrial and power electronics applications. This transistor offers a collector-emitter voltage rating of 250V and a continuous collector current of 8A, making it suitable for medium power stages. Its complementary configuration allows for reliable performance in switching circuits and linear amplifier designs. With a maximum power dissipation of 125W and a gain bandwidth product optimized for switching efficiency, this device ensures durability and stable operation under demanding conditions. For detailed datasheets and support, visit IC Manufacturer.

JANSM2N3634L-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vce) 250 V
Collector-Base Voltage (Vcb) 300 V
Emitter-Base Voltage (Veb) 7 V
Collector Current, Continuous (Ic) 8 A
Power Dissipation (Pc) 125 W
DC Current Gain (hFE) 40 to 160 (at Ic=3A)
Transition Frequency (fT) 2 MHz
Operating Junction Temperature (Tj) -65 to +200 ??C

JANSM2N3634L-Transistor Key Features

  • High Voltage Handling: With a collector-emitter voltage of 250V, it supports applications requiring elevated voltage levels, ensuring safety and operational stability.
  • High Current Capacity: Supports up to 8A continuous collector current, enabling use in medium-power switching and amplification tasks.
  • Robust Power Dissipation: The 125W power rating allows for efficient heat management and reliability under heavy load conditions.
  • Wide Temperature Range: Operates reliably from -65??C to +200??C, suitable for harsh industrial environments.

Typical Applications

  • Industrial motor control circuits where high voltage and current switching are required for reliable power modulation and control.
  • Audio amplifier output stages benefiting from the transistor??s linear amplification and power dissipation capabilities.
  • Power supply regulation and switching circuits, providing stable operation under varying load conditions.
  • General-purpose switching in automotive and industrial electronics where ruggedness and performance under stress are critical.

JANSM2N3634L-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high voltage tolerance and continuous current capability compared to many standard NPN BJTs. Its broad operating temperature range and robust power dissipation enhance reliability in industrial applications. The device??s balanced gain ensures efficient switching with lower power losses, making it an advantageous choice over lower-rated or less rugged alternatives for demanding electronic designs.

JANSM2N3634L-Transistor Brand Info

The JANSM2N3634L is manufactured by JAN Semiconductor, a brand known for its stringent quality standards and legacy in producing military-grade and industrial-grade discrete semiconductor devices. The “JAN” prefix signifies compliance with Joint Army-Navy specifications, ensuring reliability and performance in critical applications. This transistor is part of the 2N series, recognized for durability and trusted in power control and amplification roles across diverse sectors.

FAQ

What type of transistor is the JANSM2N3634L?

The device is an NPN bipolar junction transistor designed primarily for high voltage and medium power switching and amplification applications. It operates efficiently within its rated voltage and current limits.

What are the voltage ratings for this transistor?

This transistor supports a collector-emitter voltage of up to 250V, a collector-base voltage of 300V, and an emitter-base voltage of

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