JANSM2N3439-Transistor NPN Amplifier, TO-39 Metal Can Package by JAN Semiconductor

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • Featuring a high current rating, it supports robust performance under demanding load conditions.
  • The compact package reduces board space, facilitating integration into dense electronic designs.
  • Ideal for use in power regulation modules, it ensures stable voltage control in various devices.
  • Manufactured to meet industry standards, it delivers consistent reliability over extended operation.
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JANSM2N3439-Transistor Overview

The JANSM2N3439 is a high-power NPN bipolar junction transistor designed for industrial and power amplification applications. With a maximum collector current of 15A and collector-emitter voltage rating of 160V, it delivers robust performance in switching and linear amplifier circuits. Its complementary configuration with the MPS2N3440 enables push-pull amplifier designs, enhancing linearity and efficiency. The device is housed in a TO-3 package, ensuring excellent thermal dissipation for reliable operation under demanding conditions. Engineers and sourcing specialists can rely on this transistor to meet high power and frequency requirements with consistent results. For more detailed semiconductor components, visit IC Manufacturer.

JANSM2N3439-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 160 V
Collector-Base Voltage (VCBO) 250 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 15 A (max)
Power Dissipation (PD) 115 W (max)
DC Current Gain (hFE) 20 ?C 70 (at IC = 4A)
Transition Frequency (fT) 4 MHz (typical)
Package Type TO-3 Metal Can

JANSM2N3439-Transistor Key Features

  • High collector current capability: Supports up to 15A continuous current, enabling use in demanding power amplifier and switching applications.
  • Robust voltage ratings: Collector-emitter voltage of 160V and collector-base voltage of 250V ensure reliable operation under high voltage stress.
  • TO-3 package for thermal management: Metal can package provides superior heat dissipation, improving reliability and longevity in industrial environments.
  • Moderate gain with wide operating frequency: DC gain between 20 and 70 and typical transition frequency of 4 MHz balance power and speed for various applications.

Typical Applications

  • Power amplifiers in audio and industrial frequency ranges, leveraging high current and voltage handling for strong linear output.
  • Switching regulators and power supply circuits requiring rugged, high-power transistors.
  • Push-pull amplifier stages when paired with complementary PNP devices for enhanced efficiency and distortion reduction.
  • Motor control circuits where robust current and voltage capability ensures effective load driving under dynamic conditions.

JANSM2N3439-Transistor Advantages vs Typical Alternatives

This transistor offers superior power handling with a collector current rating up to 15A and a high collector-emitter voltage of 160V, outperforming many standard BJTs in industrial power stages. Its TO-3 metal package enhances thermal dissipation and reliability compared to plastic packages. The balance of gain and frequency response makes it suitable for both switching and linear amplifier applications, providing engineers with a versatile and durable alternative in high-power semiconductor choices.

JANSM2N3439-Transistor Brand Info

The JANSM2N3439 is a military-grade transistor originally manufactured by Motorola Semiconductor, now part of ON Semiconductor??s legacy portfolio. It is known for its ruggedness and reliability in demanding environments, often used in aerospace, military, and industrial power amplification systems. The device meets stringent JAN (Joint Army-Navy) specifications, ensuring consistent quality and performance under harsh conditions. Its enduring design continues to support legacy equipment and specialized industrial applications worldwide.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for this transistor is 15 amperes. This high current rating allows it to handle demanding power

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