JANSM2N3019S-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package

JANSM2N3019S-Transistor Overview

The JANSM2N3019S transistor is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Featuring robust electrical characteristics and reliable operation under diverse conditions, it is well-suited for medium-power electronic circuits requiring efficient current gain and stability. The device offers strong collector-to-emitter voltage tolerance and a practical maximum collector current, making it ideal for industrial control systems, signal amplification, and electronic driver circuits. Engineered for dependable performance, this transistor meets rigorous industrial standards and is readily available through IC Manufacturer distribution channels.

JANSM2N3019S-Transistor Technical Specifications

JANSM2N3019S-Transistor Key Features

• High Collector-Emitter Voltage Capability: Supports up to 60 V, enabling operation in medium-voltage circuits without breakdown risk.
• Moderate Collector Current Rating: Allows up to 800 mA continuous collector current, suitable for switching and amplification tasks with medium load requirements.
• Wide DC Current Gain Range: Offers flexibility with h_FE values from 40 to 300, facilitating design optimization for gain versus linearity.
• Low Power Dissipation: Maximum rating of 625 mW ensures efficient thermal management in compact circuit layouts.
• High Transition Frequency: Approximately 70 MHz transition frequency supports moderate-speed switching and signal processing applications.
• Durable TO-18 Package: Metal can encapsulation enhances mechanical robustness and thermal conductivity for reliable industrial use.
• Stable Electrical Characteristics: Well-defined and consistent parameters promote predictable circuit behavior and ease of design validation.

Typical Applications

• General purpose amplification in audio and intermediate frequency (IF) stages, where moderate gain and power handling are required.
• Switching elements in relay drivers and low-power motor controls benefiting from fast response and reliable conduction.
• Signal processing circuits in instrumentation equipment, leveraging its stable gain and frequency response.
• Industrial control systems requiring rugged transistor solutions for switching and amplification tasks within voltage and current limits.

JANSM2N3019S-Transistor Advantages vs Typical Alternatives

This transistor delivers a balanced combination of voltage tolerance, current capacity, and gain that outperforms typical low-power BJTs in industrial applications. Its robust 60 V collector-emitter rating and 800 mA current handling provide enhanced reliability compared to lower-rated alternatives. The metal TO-18 package ensures superior thermal dissipation and mechanical durability. Together, these features translate to improved circuit stability, longer operational life, and reduced failure rates under demanding conditions.

JANSM2N3019S-Transistor Brand Info

The JANSM2N3019S transistor is a military-grade or industrial-grade variant of the classic 2N3019 transistor, historically manufactured by multiple semiconductor producers specializing in discrete devices. It is known for consistent performance in high-reliability environments. This device typically originates from manufacturers with a strong legacy in bipolar transistor technology, often supplied under strict quality controls for defense, aerospace, and industrial markets. Its continued availability reflects enduring demand for rugged, proven transistor designs.

FAQ

What is the maximum voltage rating of the JANSM2N3019S transistor?