JANSM2N2907AUBC/TR NPN Transistor by JANSM | High Gain Amplifier | TO-252 Package

  • This transistor delivers reliable switching and amplification, enhancing circuit performance and control.
  • The model JANSM2N2907AUBC/TR supports efficient operation with specified electrical characteristics suited for various designs.
  • Its compact package reduces board space, allowing for more streamlined and dense circuit layouts.
  • Ideal for general-purpose amplification and switching tasks in consumer electronics and industrial equipment.
  • Manufactured to meet consistent quality standards, ensuring dependable operation under typical conditions.
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产品上方询盘

JANSM2N2907AUBC/TR Overview

The JANSM2N2907AUBC/TR is a high-performance PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It features a robust construction that ensures reliable operation under various electrical conditions, supporting collector currents up to 600 mA and a collector-emitter voltage rating of 60 V. This transistor is well-suited for industrial and commercial electronics requiring efficient power handling and signal amplification. Its compatibility with standard industry footprints and packaging makes it an ideal choice for engineers and sourcing specialists seeking dependable and scalable semiconductor solutions. For more about this product, visit IC Manufacturer.

JANSM2N2907AUBC/TR Key Features

  • High collector current capability: Supports up to 600 mA, enabling it to handle moderate power loads efficiently in switching and amplification circuits.
  • Maximum collector-emitter voltage of 60 V: Ensures safe operation in a wide range of voltage environments, enhancing design flexibility.
  • Low saturation voltage: Reduces power loss during switching, improving overall circuit efficiency and thermal management.
  • Complementary to NPN transistor designs: Facilitates push-pull and complementary amplifier configurations for balanced signal processing.

JANSM2N2907AUBC/TR Technical Specifications

Parameter Value Unit
Transistor Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 100?C300 Unitless
Transition Frequency (fT) 100 MHz
Package Type TO-92

JANSM2N2907AUBC/TR Advantages vs Typical Alternatives

This transistor offers a reliable combination of moderate power handling and high gain that outperforms many generic PNP devices with lower current ratings or voltage limits. Its low saturation voltage and robust voltage ratings make it favorable for efficient amplification and switching with improved thermal stability. Compared to alternatives, it delivers consistent performance in industrial environments while maintaining compatibility with standard packaging, ensuring ease of integration and sourcing.

Typical Applications

  • Signal amplification in audio and low-frequency circuits, where stable gain and low distortion are critical for sound quality and signal integrity.
  • Switching applications in industrial control systems, providing reliable on/off control for moderate loads up to 600 mA.
  • Complementary push-pull amplifier stages in analog circuits, enabling balanced signal processing with matched PNP-NPN transistor pairs.
  • General-purpose amplification tasks in consumer electronics, offering dependable performance in circuits requiring robust transistor behavior.

JANSM2N2907AUBC/TR Brand Info

The JANSM2N2907AUBC/TR transistor is part of the JAN series, recognized for its military-grade reliability and consistency in semiconductor performance. This product is manufactured adhering to stringent quality standards ensuring durability and dependable operation in demanding environments. The transistor??s packaging and labeling meet industry norms, making it a trusted component for engineers demanding both performance and traceability in high-reliability applications.

FAQ

What is the maximum collector current supported by this transistor?

The transistor supports a maximum collector current of 600 mA, making it suitable for moderate power amplification and switching applications without the risk of current-related failure under specified conditions.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency (fT) of approximately 100 MHz, it is capable of operating effectively in many low to mid-frequency circuits, including audio and switching applications, but is not intended for very high-frequency RF circuits.

What packaging does this transistor come in?

This device is provided in a TO-92 package, a common and compact form factor that facilitates easy mounting on printed circuit boards and compatibility with a wide range of sockets and hardware.

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产品中间询盘

Is this transistor suitable for complementary amplifier designs?

Yes, as a PNP bipolar transistor, it is designed to complement typical NPN transistors, enabling push-pull configurations and other complementary amplifier arrangements for balanced signal amplification.

What are the voltage limitations of this transistor?

The maximum collector-emitter voltage and collector-base voltage are both rated at 60 V, and the emitter-base voltage is limited to 5 V. These ratings ensure safe operation within specified voltage ranges, preventing breakdown in typical industrial and commercial environments.

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