JANSM2N2222AL-Transistor NPN Switching Amplifier TO-18 Metal Can Package – JAN Brand

  • This transistor amplifies or switches electronic signals, enabling efficient control in circuits.
  • It features a standard gain suitable for general-purpose applications, ensuring stable performance.
  • The compact package design saves board space, facilitating integration in dense circuit layouts.
  • Ideal for signal amplification in audio devices, improving sound clarity and response.
  • Manufactured to meet industry reliability standards, supporting long-term operational stability.
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JANSM2N2222AL-Transistor Overview

The JANSM2N2222AL is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. With a robust maximum collector current rating and reliable gain characteristics, it delivers consistent performance in industrial and commercial circuits. This transistor is optimized for medium power and high-speed switching tasks, making it a versatile choice for engineers seeking durability and precision. Its construction ensures stable operation under varied conditions, supported by well-defined electrical parameters. For more detailed information, visit the IC Manufacturer.

JANSM2N2222AL-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 800 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 100?C300 (typical)
Transition Frequency (fT) 300 MHz
Operating Temperature Range -55 to +150 ??C

JANSM2N2222AL-Transistor Key Features

  • High Collector Current: Supports up to 800mA, enabling robust switching and amplification in demanding circuits.
  • Wide Voltage Ratings: Withstand collector-emitter voltages up to 40V, suitable for various industrial power levels.
  • Reliable Gain Performance: Offers a stable DC current gain between 100 and 300, ensuring predictable amplification.
  • Fast Switching Speed: Transition frequency of 300MHz provides efficient operation in high-frequency applications.

Typical Applications

  • Signal amplification in audio, sensor, and control circuits requiring medium power handling and linear response.
  • Switching elements in relay drivers and logic control systems in industrial automation setups.
  • Pulse generation and timing circuits benefiting from fast switching and consistent gain characteristics.
  • Basic transistor arrays in educational and prototyping platforms where reliability and versatility are essential.

JANSM2N2222AL-Transistor Advantages vs Typical Alternatives

This transistor offers superior current handling and voltage tolerance compared to common low-power BJTs, making it ideal for industrial-grade applications. Its higher transition frequency enhances switching speed, improving efficiency in timing and amplification tasks. The robust operating temperature range and consistent gain ensure reliable performance under stress, positioning it favorably against alternatives with narrower specifications.

JANSM2N2222AL-Transistor Brand Info

The JANSM2N2222AL is a military-grade variant of the widely used 2N2222 transistor, produced under stringent quality controls that meet MIL-SPEC standards. It is typically manufactured by established semiconductor producers specializing in high-reliability discrete components for defense and industrial markets. This transistor upholds rigorous testing protocols to guarantee performance under harsh environmental conditions, making it a trusted component in critical electronic systems.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current rating is 800mA, allowing it to handle moderate power loads effectively in switching and amplification circuits.

Can this transistor operate at high frequencies?

Yes, with a transition frequency of approximately 300MHz, it supports high-speed switching applications suitable for RF and pulse circuits.

What voltage levels can this device withstand?

It can tolerate a collector-emitter voltage up to 40V and a collector-base voltage up to 75V, providing flexibility in various voltage environments.

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Is this transistor suitable for harsh environments?

Yes, it operates reliably within a temperature range from -55??C to +150??C, making it suitable for industrial and military applications requiring

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