JANSM2N2221AUB/TR MOSFET Transistor by JANSM, TO-220 Package, High Performance

  • Provides efficient signal amplification to improve overall system performance in electronic circuits.
  • Supports a key frequency range suitable for high-speed data transmission and precise signal processing.
  • Features a compact package type that reduces board space and simplifies integration into dense layouts.
  • Ideal for use in communication devices, enhancing signal clarity and stability under varying conditions.
  • Manufactured to meet strict quality standards, ensuring consistent operation and long-term reliability.
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产品上方询盘

JANSM2N2221AUB/TR Overview

The JANSM2N2221AUB/TR is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Known for its robust collector current handling and reliable gain characteristics, this transistor supports a maximum collector current of 800mA and a collector-emitter voltage of 40V. Its TO-92 package ensures ease of integration into a variety of industrial and electronic systems. Engineered to deliver consistent performance under stringent conditions, this transistor is ideal for power amplification, signal processing, and switching tasks. For more detailed technical support and procurement options, visit IC Manufacturer.

JANSM2N2221AUB/TR Key Features

  • High collector current capacity: Supports up to 800mA, enabling robust load driving capabilities in switching and amplification circuits.
  • Moderate voltage rating: With a maximum collector-emitter voltage of 40V, it suits low to medium voltage applications while maintaining device reliability.
  • Stable current gain (hFE): Provides a typical DC current gain ranging between 100 and 300, ensuring efficient signal amplification and design predictability.
  • Low saturation voltage: Minimizes power loss during switching, enhancing overall circuit efficiency and reducing heat dissipation requirements.
  • Thermal stability: Designed to operate reliably with a junction temperature up to 150??C, supporting performance in demanding environments.
  • Compact TO-92 package: Facilitates easy handling and mounting on through-hole PCBs for versatile industrial and prototyping applications.
  • Complementary to PNP devices: Enables balanced circuit designs when paired with complementary transistors for push-pull amplifier configurations.

JANSM2N2221AUB/TR Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 800 mA
DC Current Gain (hFE) 100 to 300
Power Dissipation (Ptot) 625 mW
Transition Frequency (fT) 300 MHz (typical)
Package Type TO-92 Plastic
Operating Junction Temperature (TJ) -55??C to +150??C

JANSM2N2221AUB/TR Advantages vs Typical Alternatives

This transistor offers a balanced combination of collector current capacity and voltage rating that surpasses many typical small-signal transistors. Its reliable current gain and low saturation voltage contribute to improved switching efficiency and reduced power losses. Compared to alternatives, it ensures greater thermal stability and consistent performance, making it a dependable choice for a wide range of industrial electronics and power management applications.

Typical Applications

  • Signal amplification in analog circuits where moderate power and linear gain are required, such as audio amplifiers and sensor interfaces.
  • Switching applications in industrial control systems, including relay drivers and load switches.
  • Low to medium power regulation and driver stages in power supplies and motor control circuits.
  • General-purpose transistor use in embedded systems, instrumentation, and test equipment.

JANSM2N2221AUB/TR Brand Info

The JANSM2N2221AUB/TR is produced under stringent quality standards by a reputable semiconductor manufacturer specializing in industrial-grade discrete components. This product line is known for delivering reliable and consistent transistor solutions tailored for demanding electronics applications. Its robust design and proven performance have made it a preferred choice for engineers and sourcing specialists seeking dependable NPN transistors in the industrial and commercial sectors.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a maximum continuous collector current of 800mA, allowing it to handle moderate power loads in switching and amplification circuits without compromising reliability.

Can this device operate at high frequencies?

Yes, it features a typical transition frequency (fT) of approximately 300 MHz, making it suitable for moderate frequency analog and switching applications.

What package type does this transistor come in?

This device is housed in a TO-92 plastic package, which is a widely used through-hole form factor providing ease of mounting and thermal management in various PCB designs.

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产品中间询盘

What is the typical DC current gain range for this transistor?

The DC current gain (hFE) typically ranges from 100 to 300, which supports reliable and efficient amplification in low to medium power circuits.

Is this transistor suitable for high-temperature environments?

Yes, it can operate reliably over a junction temperature range from -55??C up to 150??C, making it appropriate for demanding industrial environments.

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