JANSL2N3634UB-Transistor NPN Power Transistor in TO-220 Package ?C High Performance

  • This transistor amplifies electrical signals efficiently, enabling improved circuit performance and control.
  • It supports a voltage rating suitable for medium-power applications, ensuring stable operation under varied loads.
  • The compact package design offers board-space savings, facilitating integration into dense electronic assemblies.
  • Ideal for switching tasks in power management circuits, it enhances energy efficiency and device responsiveness.
  • Built to meet industry reliability standards, this component provides consistent performance over extended use.
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JANSL2N3634UB-Transistor Overview

The JANSL2N3634UB transistor is a high-performance NPN bipolar junction transistor (BJT) designed for medium to high power switching and amplification applications. Featuring a collector-emitter voltage rating suitable for demanding industrial environments, it enables reliable operation in power regulation and signal amplification circuits. This transistor offers robust current handling capabilities and stable gain characteristics, making it ideal for use in power management, motor control, and audio amplification systems. Engineered for efficiency and durability, this device supports long-term performance in harsh conditions. For detailed specifications and sourcing, visit IC Manufacturer.

JANSL2N3634UB-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 8 A
Power Dissipation (Ptot) 80 W
DC Current Gain (hFE) 40 to 160 ?C
Transition Frequency (fT) 15 MHz
Operating Junction Temperature (Tj) 150 ??C

JANSL2N3634UB-Transistor Key Features

  • High Voltage Tolerance: With a collector-emitter voltage rating of 100 V, it supports robust operation in high-voltage switching and amplification tasks, ensuring system reliability under stress.
  • Strong Current Handling: Capable of handling collector currents up to 8 A, it is well-suited for power amplification and motor control, enabling efficient drive of moderate loads.
  • Wide Gain Range: The DC current gain varies from 40 to 160, providing design flexibility for amplification stages requiring different gain levels without compromising linearity.
  • Thermal Stability: Rated for junction temperatures up to 150??C, it maintains performance under elevated thermal conditions, which is critical for industrial and automotive applications.

Typical Applications

  • Switching regulators and power supply control circuits where high voltage and current switching are required to maintain efficiency and reliability over long operational periods.
  • Motor driver circuits in industrial automation, offering dependable current amplification for driving DC motors and actuators.
  • Audio amplifier output stages benefiting from linear gain and high power dissipation capacity to deliver clean sound amplification without distortion.
  • General purpose amplification in signal processing systems that demand consistent gain and thermal robustness in varying environments.

JANSL2N3634UB-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to many standard BJTs, making it advantageous for high-power industrial applications. Its broad gain range enables adaptable circuit designs, while its robust thermal performance ensures durability and long-term stability. These factors combined deliver enhanced efficiency and reliability, outperforming typical alternatives that may suffer from lower current capacity or thermal limits.

JANSL2N3634UB-Transistor Brand Info

The JANSL2N3634UB transistor is a product commonly associated with JAN Semiconductor, known for manufacturing reliable discrete semiconductors tailored for industrial and automotive power applications. The company focuses on providing robust components that meet rigorous quality standards. This transistor exemplifies JAN??s commitment to delivering devices optimized for power switching and amplification, backed by comprehensive datasheets and global availability for diverse engineering needs.

FAQ

What is the maximum collector-emitter voltage rating of this transistor?

The maximum collector-emitter

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