JANSL2N3501UB/TR N-Channel MOSFET Transistor by JANSL | TO-220 Package

  • Switching transistor designed to efficiently control power flow, reducing energy loss in circuits.
  • Features a low collector-emitter saturation voltage, which enhances performance by minimizing heat generation.
  • Encased in a compact package, the device offers board-space savings suitable for dense electronic assemblies.
  • Ideal for use in power management applications, improving system stability and response in real-world conditions.
  • Manufactured following stringent quality standards to ensure consistent operation and long-term reliability.
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JANSL2N3501UB/TR Overview

The JANSL2N3501UB/TR is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. With a robust voltage rating and reliable current handling capabilities, it suits a wide range of industrial and consumer electronics needs. This transistor ensures stable operation under varying electrical conditions, making it ideal for precision circuits. Its compact package and consistent electrical characteristics provide engineers and sourcing specialists with a dependable solution for efficient design integration. For detailed component sourcing and technical support, visit IC Manufacturer.

JANSL2N3501UB/TR Key Features

  • High voltage rating: Supports collector-emitter voltages up to 60V, enabling use in demanding switching and amplification tasks.
  • Moderate collector current capability: Handles continuous collector currents up to 500mA, suitable for medium-power applications.
  • Gain consistency: Offers a stable DC current gain (hFE) range, improving signal amplification accuracy.
  • Low saturation voltage: Enhances efficiency in switching applications by minimizing power loss.
  • Standard TO-92 package: Allows easy PCB mounting and compatibility with automated assembly processes.
  • Reliable thermal characteristics: Ensures stable operation across a wide temperature range for industrial environments.
  • Low noise figure: Suitable for analog circuits requiring low signal distortion.

JANSL2N3501UB/TR Technical Specifications

Parameter Value Unit Notes
Collector-Emitter Voltage (VCEO) 60 V Maximum voltage between collector and emitter
Collector-Base Voltage (VCBO) 80 V Maximum voltage between collector and base
Emitter-Base Voltage (VEBO) 5 V Maximum voltage between emitter and base
Collector Current (IC) 500 mA Continuous collector current rating
DC Current Gain (hFE) 40 to 300 ?? Gain range at IC=10mA, VCE=1V
Power Dissipation (Ptot) 625 mW Total power dissipation at 25??C
Transition Frequency (fT) 100 MHz Frequency at which current gain drops to unity
Operating Temperature Range (Topr) -55 to +150 ??C Recommended ambient temperature range
Package Type TO-92 ?? Standard through-hole mounting package

JANSL2N3501UB/TR Advantages vs Typical Alternatives

This transistor stands out due to its balanced voltage and current ratings, providing enhanced reliability and efficiency in switching and amplification tasks. Compared to typical alternatives, it offers a wider gain range and lower saturation voltage, which translates into improved signal fidelity and reduced power losses. Its robust thermal characteristics ensure consistent performance in industrial conditions, making it a preferred choice for designers requiring dependable, cost-effective transistor solutions.

Typical Applications

  • General-purpose switching circuits requiring moderate current and voltage handling, ideal for industrial control systems and consumer electronics.
  • Signal amplification in audio and analog signal processing circuits where consistent gain is critical.
  • Driver stages for relay and LED circuits, benefiting from low saturation voltage for efficient operation.
  • Temperature and environmental sensors integration where reliable transistor operation across a wide temperature range is essential.

JANSL2N3501UB/TR Brand Info

The JANSL2N3501UB/TR is produced by a reputable semiconductor manufacturer known for delivering reliable and high-quality bipolar junction transistors optimized for industrial and consumer applications. This product line emphasizes consistent performance, manufacturing precision, and compliance with industry standards, ensuring seamless integration into a variety of electronics designs. The transistor benefits from rigorous quality control and extensive datasheet documentation to support engineers and sourcing specialists worldwide.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current for this device is 500mA. This rating ensures that the transistor can handle moderate power levels suitable for a variety of switching and amplification applications without thermal or electrical stress.

Can this transistor operate in high-temperature environments?

Yes, the transistor is designed to operate reliably within an ambient temperature range of -55??C to +150??C, making it suitable for demanding industrial applications where temperature fluctuations are common.

What package type does this transistor use, and why is it important?

This transistor is housed in a TO-92 package, a widely used through-hole package that facilitates easy PCB mounting and compatibility with automated assembly lines, aiding in cost-effective manufacturing and repair.

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What are the voltage limits for the device??s different terminals?

The device supports a collector-emitter voltage (VCEO) of up to 60V, collector-base voltage (VCBO) up to 80V, and emitter-base voltage (VEBO) up to 5V. These limits define safe operating conditions to prevent breakdown and ensure reliable transistor function.

How does the current gain range affect circuit design?

The DC current gain (hFE) ranges from 40 to 300, providing flexibility in amplification stages. Designers can select appropriate biasing to achieve desired amplification levels with stable performance, which is critical for precise signal processing and control circuits.

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