JANSL2N2906AL-Transistor PNP Bipolar Junction Transistor – TO-18 Metal Can Package

  • This transistor amplifies current efficiently, enabling stable signal control in various electronic circuits.
  • Featuring a high voltage rating, it supports reliable operation under demanding electrical conditions.
  • The compact package design minimizes board space, aiding in dense circuit layouts and portable devices.
  • Ideal for switching and amplification tasks in audio or power regulation applications, enhancing performance.
  • Manufactured to meet strict quality standards, ensuring consistent operation and long-term reliability.
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JANSL2N2906AL-Transistor Overview

The JANSL2N2906AL-Transistor is a robust PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Engineered to deliver reliable performance in low to medium power circuits, this transistor supports collector currents up to 600mA and operates at voltages up to 40V. Its complementary nature makes it ideal for use alongside NPN counterparts in push-pull amplifier stages or switching devices. The device offers dependable gain characteristics and thermal stability, ensuring consistent operation across a broad temperature range. Sourcing specialists and design engineers will find this transistor a versatile component for industrial and consumer electronics solutions. For further details, visit IC Manufacturer.

JANSL2N2906AL-Transistor Technical Specifications

Parameter Specification
Transistor Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (Vce) 40 V
Collector Current (Ic) 600 mA
Power Dissipation (Pd) 800 mW
DC Current Gain (hFE) 100 to 300 (typical range)
Transition Frequency (fT) 100 MHz (typical)
Operating Junction Temperature (Tj) -65??C to +150??C
Package Type TO-18 Metal Can

JANSL2N2906AL-Transistor Key Features

  • High current capacity: Supports collector currents up to 600mA, enabling use in moderate power switching and amplification circuits.
  • Wide voltage rating: Operates up to 40V collector-emitter voltage, suitable for a variety of low- to medium-voltage applications.
  • Reliable gain characteristics: Provides a stable DC current gain (hFE) between 100 and 300, ensuring consistent signal amplification.
  • Thermal stability: Designed to withstand junction temperatures up to 150??C, supporting operation in demanding environments.

Typical Applications

  • Used in audio amplifier output stages, where complementary PNP transistors like this support signal amplification with low distortion and reliable performance.
  • Switching devices in power supply regulation circuits, controlling current flow effectively in industrial control systems.
  • General-purpose low noise preamplifier circuits, benefiting from the transistor??s stable gain and frequency response.
  • Driver stages for relay or solenoid control in automation and embedded systems.

JANSL2N2906AL-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage, current handling, and gain that makes it advantageous over many generic PNP alternatives. Its metal TO-18 package provides superior thermal dissipation and mechanical durability compared to plastic packages. With a high transition frequency and stable gain, it ensures precise amplification and switching with less signal distortion or thermal drift. These features support improved reliability and performance in demanding industrial electronics environments.

JANSL2N2906AL-Transistor Brand Info

The JANSL2N2906AL-Transistor is commonly sourced from established semiconductor manufacturers specializing in bipolar junction transistor technologies. Typically, such devices are branded and produced under strict quality controls to meet industrial standards, ensuring long-term availability and consistency. The ??JAN?? prefix historically indicates a military or high-reliability grade, signifying enhanced quality and ruggedness. This makes it a trusted choice for engineers requiring dependable components for industrial, aerospace, or defense applications.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this transistor is 600 milliamps (mA). This allows it to handle moderate loads in switching or amplification circuits without risk of damage under specified operating conditions.

Can this transistor be used in high-frequency applications?

Yes, the transistor features a typical transition frequency (fT) of around 100 MHz, making it suitable for moderate high-frequency amplification or switching tasks, such as RF preamplifiers or signal processing circuits.

What package type does this transistor use?

This device is housed in a TO-18 metal can package, which offers enhanced thermal conductivity and mechanical protection compared to common plastic packages, improving reliability under thermal stress.

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