JANSL2N2906A-Transistor Overview
The JANSL2N2906A transistor is a high-performance PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. With a maximum collector current of 600mA and a collector-emitter voltage rating of 40V, it provides reliable operation in low to medium power circuits. Its robust design supports moderate gain and switching speeds, making it suitable for industrial and consumer electronics. Packaged typically in a TO-18 metal can, this transistor ensures durability and effective thermal dissipation. Engineers and sourcing specialists will find this device valuable for its well-balanced electrical characteristics and compatibility across various electronic designs. For more detailed sourcing and technical support, visit IC Manufacturer.
JANSL2N2906A-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 40 V |
| Collector-Base Voltage (Vcbo) | 60 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 600 mA |
| DC Current Gain (hFE) | 100 to 300 (varies with Ic and test conditions) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Power Dissipation (Pd) | 625 mW |
| Package Type | TO-18 Metal Can |
JANSL2N2906A-Transistor Key Features
- High collector current capacity: Supports up to 600mA, enabling effective switching and amplification in moderate power circuits.
- Moderate voltage ratings: Collector-emitter voltage up to 40V ensures compatibility with a wide range of industrial and consumer electronics applications.
- Reliable gain characteristics: DC current gain ranging from 100 to 300 provides predictable amplification performance for analog signal processing.
- Compact TO-18 packaging: Metal can package offers enhanced thermal dissipation and mechanical robustness, crucial for long-term reliability.
Typical Applications
- Signal amplification in audio and low-frequency amplifier circuits, where stable gain and linear operation are critical for sound fidelity.
- Switching devices in relay drivers, enabling efficient control of loads with moderate current demands.
- General-purpose amplification in industrial control systems requiring durable and consistent transistor performance.
- Complementary transistor pairs in analog circuit design, particularly in push-pull amplifier stages and switching regulators.
JANSL2N2906A-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage, current, and gain ratings that make it a reliable choice compared to standard PNP BJTs. Its 40V collector-emitter rating and 600mA current capacity deliver enhanced robustness for industrial applications. The metal TO-18 package improves thermal management and mechanical stability, outperforming plastic-encapsulated alternatives in demanding environments. These factors contribute to consistent switching speeds and precise amplification, ensuring higher system efficiency and longer operating life.
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JANSL2N2906A-Transistor Brand Info
The JANSL2N2906A is a military-grade or industrial-grade variant of the widely used 2N2906 PNP transistor, originally standardized by JEDEC. Devices in this series are manufactured under stringent quality controls to meet MIL-STD requirements, often supplied by reputable semiconductor manufacturers specializing in high-reliability components. This transistor is recognized for its robustness, making it a preferred choice in aerospace, defense, and industrial automation sectors. Its legacy and compatibility ensure broad support and availability across global supply chains.
FAQ
What is the maximum collector current rating of this transistor?
The transistor supports a maximum collector current of 600 milliamps (mA), which makes it suitable for moderate power amplification and switching applications without compromising device reliability.
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Can this transistor be used in high-frequency applications?
With a typical transition frequency (fT) around 100 MHz, this PNP transistor is adequate for low to medium frequency applications but may not be optimal for very high-frequency RF circuits.
