JANSL2N2369AUB-Transistor NPN Switching Amplifier in TO-18 Metal Can Package

  • This transistor amplifies electrical signals, enabling precise control in electronic circuits.
  • Its voltage and current ratings support stable operation under typical load conditions.
  • The compact package reduces board space, facilitating efficient circuit designs.
  • Ideal for switching applications in power management, improving overall system efficiency.
  • Manufactured to meet strict quality standards, ensuring consistent performance and durability.
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JANSL2N2369AUB-Transistor Overview

The JANSL2N2369AUB is a high-performance bipolar junction transistor (BJT) designed for low-noise amplification and switching applications in electronic circuits. This NPN transistor offers robust current handling and voltage ratings suitable for medium-power applications, providing reliable operation in a compact SOT-23 package. Its low saturation voltage and high gain make it ideal for signal amplification and switching tasks within industrial and consumer electronics. Engineers and sourcing specialists can rely on this device for consistent performance, efficient integration, and cost-effective circuit designs. For more detailed information, visit IC Manufacturer.

JANSL2N2369AUB-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN ??
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Continuous Collector Current (IC) 0.8 A
Power Dissipation (PD) 350 mW
DC Current Gain (hFE) 100?C300 ??
Transition Frequency (fT) 100 MHz
Package Type SOT-23 ??

JANSL2N2369AUB-Transistor Key Features

  • High Current Gain: Provides efficient signal amplification, improving circuit sensitivity and reducing power consumption in analog applications.
  • Low Collector-Emitter Saturation Voltage: Enables effective switching with minimal power loss, enhancing overall system efficiency.
  • Compact SOT-23 Package: Facilitates space-saving PCB layouts without compromising thermal performance or reliability.
  • Wide Frequency Response: Suitable for high-frequency amplification up to 100 MHz, supporting RF and communication circuits.

Typical Applications

  • Low-noise audio and radio frequency amplification circuits requiring reliable gain and minimal distortion in compact designs.
  • Switching circuits within power management and control systems, benefiting from low saturation voltage for energy efficiency.
  • Signal processing modules in industrial automation where stable transistor performance is critical under variable load conditions.
  • General-purpose amplification and switching in consumer electronics, including portable devices and sensor interfaces.

JANSL2N2369AUB-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of high current gain and low saturation voltage, making it more efficient than many generic NPN transistors. Its compact SOT-23 package allows for better integration in modern, space-constrained designs. Additionally, the device’s frequency response and power ratings provide enhanced reliability and performance, making it a superior choice for precision amplification and switching tasks compared to typical alternatives.

JANSL2N2369AUB-Transistor Brand Info

The JANSL2N2369AUB transistor is part of a widely recognized product line manufactured by leading semiconductor suppliers specializing in discrete components. This product is engineered to meet stringent industry standards for performance and reliability, ensuring consistent quality for demanding electronic applications. The device is supported by comprehensive technical documentation and global distribution channels, facilitating easy sourcing and integration for engineers and procurement teams worldwide.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a continuous collector current of up to 0.8 amperes, making it suitable for medium-power amplification and switching applications without risk of thermal overload under specified operating conditions.

Can this transistor operate at high frequencies?

Yes, the device has a transition frequency (fT) of approximately 100 MHz, which allows it to function effectively in high-frequency signal amplification, including RF and communication circuits.

What package type does this transistor come in, and why is it beneficial?

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