JANSL2N2221AUBC/TR Overview
The JANSL2N2221AUBC/TR is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a robust collector current rating and fast switching capabilities, it is well-suited for industrial and electronic circuit designs demanding reliability and efficiency. Packaged in a compact SOT-23 format, it offers excellent thermal stability and ease of integration on dense printed circuit boards. This transistor is an ideal choice for engineers and sourcing specialists seeking a dependable solution with consistent electrical characteristics from a trusted IC Manufacturer.
JANSL2N2221AUBC/TR Key Features
- High collector current capability: Supports up to 600 mA continuous current, enabling effective control in power switching applications.
- Fast transition frequency: With a transition frequency (fT) of approximately 300 MHz, it ensures high-speed switching and amplification performance.
- Low collector-emitter saturation voltage: Minimizes power dissipation and improves circuit efficiency in switching roles.
- Compact SOT-23 package: Facilitates easy integration into space-constrained PCB layouts while maintaining reliable thermal performance.
JANSL2N2221AUBC/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 75 | V |
| Emitter-Base Voltage (VEBO) | 6 | V |
| Collector Current (IC) | 600 | mA |
| Power Dissipation (Ptot) | 350 | mW |
| Transition Frequency (fT) | 300 | MHz |
| DC Current Gain (hFE) | 100-300 | (Typical) |
| Package Type | SOT-23 | ?C |
JANSL2N2221AUBC/TR Advantages vs Typical Alternatives
This transistor offers a balanced combination of high collector current capacity and fast switching speed compared to typical small-signal transistors. Its low saturation voltage and compact SOT-23 package improve efficiency and integration density. The consistent gain and voltage ratings provide reliability in demanding industrial environments, making it a superior choice for applications where both performance and footprint are critical.
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Typical Applications
- Switching regulators and power management circuits requiring fast response and reliable current handling in compact layouts.
- General-purpose amplification in audio and signal processing circuits where linearity and gain stability are essential.
- Driver stages for relays, LEDs, and other loads in industrial control systems.
- High-speed switching applications in communication and instrumentation equipment.
JANSL2N2221AUBC/TR Brand Info
This transistor is part of the JANSL2 series, produced by a recognized IC Manufacturer known for reliable semiconductor components tailored for industrial and commercial electronics. The JANSL2N2221AUBC/TR combines proven transistor technology with modern packaging standards, ensuring compatibility and performance consistency for professional engineering and sourcing teams worldwide.
FAQ
What is the maximum collector current for this transistor?
The maximum continuous collector current is rated at 600 mA, allowing it to handle moderate power loads in switching and amplification circuits without compromising reliability.
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What package type does this transistor come in?
It is housed in a SOT-23 package, which is a compact surface-mount form factor ideal for space-constrained PCB designs and efficient thermal dissipation.
Can this transistor be used for high-frequency applications?
Yes, with a transition frequency around 300 MHz, this device supports high-speed switching and amplification, making it suitable for RF and fast digital switching circuits.
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What is the typical current gain (hFE) range for this device?
The typical DC current gain ranges between 100 and 300, providing adequate amplification for signal processing and switching roles in a variety of electronic systems.
What voltage ratings should be considered for safe operation?
Safe operating voltage limits include a collector-emitter voltage of 40 V, a collector-base voltage of 75 V, and an emitter-base voltage of 6 V. Staying within these parameters ensures device longevity and stable performance.
