JANSK2N2919U-Transistor Overview
The JANSK2N2919U-Transistor is a robust NPN bipolar junction transistor designed for medium-power amplification and switching applications. Engineered to deliver reliable performance in industrial and electronic circuit designs, this transistor supports collector currents up to 800mA and a collector-emitter voltage rating of 40V. Its high gain and switching speed make it suitable for a wide range of electronic devices requiring efficient signal amplification and control. The device??s TO-18 metal can package ensures excellent thermal stability and durability, making it a preferred choice for engineers and sourcing specialists seeking dependable semiconductor components. Available through IC Manufacturer, it offers consistent quality aligned with industrial standards.
JANSK2N2919U-Transistor Key Features
- High Collector Current Capability: Supports up to 800mA, enabling effective handling of moderate power loads in various circuits.
- Collector-Emitter Voltage (Vce): Rated at 40V, ensuring operation within safe voltage limits for reliable switching and amplification performance.
- Typical Gain (hFE): Characterized by a gain range of 40 to 300, providing flexibility for signal amplification across diverse applications.
- TO-18 Metal Can Package: Offers enhanced thermal dissipation and mechanical durability, improving reliability under industrial operating conditions.
- Fast Switching Characteristics: Suitable for both analog and digital circuits requiring quick response times.
- Low Noise Performance: Beneficial for audio amplification and sensitive signal processing tasks.
- Temperature Range: Operates effectively across a wide temperature spectrum, supporting industrial-grade environments.
JANSK2N2919U-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 40 | V |
| Collector-Base Voltage (Vcbo) | 60 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Collector Current (Ic) | 800 | mA |
| Power Dissipation (Ptot) | 625 | mW |
| DC Current Gain (hFE) | 40 to 300 | (typical) |
| Transition Frequency (fT) | 100 | MHz |
| Package Type | TO-18 | Metal Can |
JANSK2N2919U-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of moderate power handling and high gain, outperforming typical low-power transistors by providing higher collector current capability and voltage ratings. Its metal can package enhances thermal management and durability compared to plastic-encapsulated alternatives. These features contribute to improved reliability and consistent performance in industrial control and amplification circuits, making it a preferred choice for engineers seeking stable, medium-power transistor solutions.
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Typical Applications
- Signal amplification in audio and low-frequency circuits where moderate current and voltage handling are required for clear, distortion-free output.
- Switching elements in industrial control systems, enabling precise on/off control of loads within rated power limits.
- Driver stages in power supply regulation circuits, enhancing the stability and efficiency of voltage regulation.
- General-purpose transistor use in electronic testing and prototyping environments due to its reliable gain and durability.
JANSK2N2919U-Transistor Brand Info
The JANSK2N2919U transistor is a specialized semiconductor device manufactured under stringent quality controls to meet industrial requirements. Designed with a focus on reliability and consistent performance, this product represents the brand??s commitment to providing durable, high-performance transistors suitable for demanding electronic applications. Its metal can packaging and well-defined electrical characteristics make it a trusted choice in the semiconductor market for engineers requiring reliable bipolar junction transistors.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current rating for this transistor is 800mA. This allows it to be used effectively in medium-power applications without risking damage due to current overload, ensuring reliable operation within specified limits.
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Can this transistor be used in high-frequency switching applications?
Yes, with a transition frequency (fT) of approximately 100 MHz, this transistor supports fast switching capabilities suitable for many analog and digital circuits requiring moderate frequency response.
What package type does this transistor use and why is it important?
This device is housed in a TO-18 metal can package, which offers superior thermal dissipation and mechanical robustness compared to plastic packages. This packaging improves reliability, especially in industrial environments with varying temperatures and mechanical stress.
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What voltage ratings should be considered when designing circuits with this transistor?
Key voltage limits include a collector-emitter voltage (Vceo) of 40V, collector-base voltage (Vcbo) of 60V, and emitter-base voltage (Vebo) of 5V. Designers must ensure operating voltages remain within these ratings to prevent device failure.
Is the gain of this transistor predictable for amplifier design?
The transistor has a DC current gain (hFE) ranging from 40 to 300, providing flexibility but also requiring consideration during circuit design to accommodate gain variability. This range enables effective amplification while allowing for design margins.
