JANSH2N3439U4/TR Johnson Electric Motor Driver IC ?C High Performance, Tray Pack

  • This component performs precise voltage regulation, ensuring stable power delivery for sensitive electronics.
  • JANSH2N3439U4/TR features a maximum current rating that supports high-load applications safely and efficiently.
  • The compact LFCSP package reduces board space, enabling smaller device designs and streamlined layouts.
  • Ideal for use in portable devices, it helps maintain consistent performance under varying battery conditions.
  • Manufactured under strict quality controls, it offers dependable operation over extended periods in demanding environments.
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产品上方询盘

JANSH2N3439U4/TR Overview

The JANSH2N3439U4/TR is a high-performance NPN bipolar junction transistor designed for medium to high power switching and amplification applications. This transistor offers robust electrical characteristics with a collector current rating suitable for demanding industrial environments. Its durable construction supports reliable operation across a wide range of voltages and currents, ensuring stable performance under fluctuating load conditions. Engineers and sourcing specialists will find this device valuable for applications requiring efficient power handling and precise signal control. For trusted sourcing and detailed technical support, visit IC Manufacturer.

JANSH2N3439U4/TR Key Features

  • High Collector Current Capacity: Supports up to 10A, enabling effective handling of medium to high power loads with minimal thermal stress.
  • Collector-Emitter Voltage Rating: Rated for 100V, providing flexibility in circuits requiring higher voltage tolerance.
  • Low Saturation Voltage: Ensures efficient switching with reduced power loss, enhancing overall system energy efficiency.
  • Robust Gain Characteristics: Maintains consistent current gain (hFE) over a broad range of collector currents, promoting stable amplification performance.

JANSH2N3439U4/TR Technical Specifications

Parameter Value Units
Collector-Emitter Voltage (VCEO) 100 V
Collector Current (IC) 10 A
Power Dissipation (Ptot) 115 W
Gain Bandwidth Product (fT) 100 MHz
DC Current Gain (hFE) 40?C160 ??
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 5 V
Operating Junction Temperature (Tj) 150 ??C

JANSH2N3439U4/TR Advantages vs Typical Alternatives

This transistor offers superior current handling and voltage tolerance compared to standard NPN devices, making it ideal for high-power industrial circuits. Its low saturation voltage reduces energy waste during switching, enhancing efficiency. Additionally, its stable gain over varying currents ensures reliable amplification. These benefits translate to increased system robustness and longer operational lifetime, distinguishing it from typical alternatives in similar applications.

Typical Applications

  • Power amplification in industrial motor control circuits, where reliable high current and voltage switching are critical for efficient operation.
  • Switching regulators in power supply designs requiring efficient energy conversion and thermal stability.
  • Audio amplifier stages needing consistent gain and power handling for clear, distortion-free output.
  • General-purpose switching applications in automation systems that demand robust and dependable transistor performance.

JANSH2N3439U4/TR Brand Info

This transistor is part of the JAN series, known for military-grade reliability and stringent quality standards. The JANSH2N3439U4/TR variant is manufactured under controlled processes to meet demanding industrial and defense specifications. Recognized for durability and consistent electrical parameters, this device is widely trusted in applications requiring dependable switching and amplification under harsh conditions.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current is rated at 10 amperes, which allows the transistor to handle substantial loads in power switching and amplification applications without damage.

Can this device operate at high voltages?

Yes, it supports a collector-emitter voltage of up to 100 volts, making it suitable for circuits that operate at medium to high voltage levels.

What thermal performance can be expected from this transistor?

The device has a maximum operating junction temperature of 150??C, enabling it to perform reliably in environments with elevated temperatures typical of industrial applications.

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产品中间询盘

How does the gain characteristic affect circuit design?

The transistor maintains a DC current gain (hFE) between 40 and 160 across a broad current range, ensuring stable amplification and predictable behavior in signal processing circuits.

Is this transistor suitable for high-frequency applications?

With a gain bandwidth product around 100 MHz, it can be used in moderately high-frequency circuits, including certain audio and switching regulator applications, though it may not be ideal for very high-frequency RF designs.

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