JANSH2N2222AUB/TR NPN Transistor by JAN Model ?C TO-92 Package, High Gain Switching

  • Acts as a MOSFET transistor enabling efficient switching and amplification in electronic circuits.
  • Features a low gate charge that improves switching speed and reduces energy loss during operation.
  • Designed in a compact package, it saves board space and facilitates easier integration into dense layouts.
  • Ideal for power management in battery-operated devices, enhancing energy efficiency and prolonging runtime.
  • Manufactured with stringent quality controls to ensure consistent performance and long-term reliability.
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产品上方询盘

JANSH2N2222AUB/TR Overview

The JANSH2N2222AUB/TR is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It features robust gain characteristics and reliable switching speeds, making it ideal for industrial and commercial electronics. Its compact SOT-23 package ensures easy integration into space-constrained circuits, while maintaining excellent thermal stability. This transistor is well-suited for signal processing, driver stages, and low to medium current loads. Sourced from IC Manufacturer, the JANSH2N2222AUB/TR combines proven semiconductor technology with consistent quality, supporting engineers and sourcing specialists in optimizing circuit performance and reliability.

JANSH2N2222AUB/TR Key Features

  • High Current Gain: Enables efficient amplification with stable performance across varying operating conditions, improving signal integrity in analog and switching circuits.
  • Fast Switching Speed: Supports rapid on/off transitions, reducing switching losses in switching regulators and pulse circuits for enhanced efficiency.
  • Compact SOT-23 Package: Facilitates space-saving PCB designs without compromising thermal dissipation capabilities, ideal for modern miniaturized electronic assemblies.
  • Reliable Thermal Performance: Maintains stable operation under moderate power dissipation, ensuring durability and long-term reliability in demanding applications.

JANSH2N2222AUB/TR Technical Specifications

Parameter Value Unit
Transistor Type NPN
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 350 mW
Transition Frequency (fT) 300 MHz
DC Current Gain (hFE) 100?C300
Package SOT-23

JANSH2N2222AUB/TR Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate voltage and current ratings with a compact footprint, making it advantageous over larger or less efficient alternatives. Its fast switching speed and stable gain ensure precise control in switching and amplification tasks, while the SOT-23 package supports modern PCB miniaturization trends. The device??s thermal stability and reliable performance enhance system longevity, providing sourcing specialists and engineers with a dependable component that improves overall circuit efficiency.

Typical Applications

  • Signal amplification in low to medium power analog circuits, where consistent gain and low noise are critical for clean signal processing.
  • Switching element in power management and driver circuits, enabling efficient control of loads with rapid switching capability.
  • Interface transistor for digital logic level shifting or buffering, supporting communication between microcontrollers and peripheral devices.
  • General-purpose switching in relay drivers, LED drivers, and sensor interface circuits requiring reliable transistor switching performance.

JANSH2N2222AUB/TR Brand Info

The JANSH2N2222AUB/TR is manufactured by a reputable semiconductor producer known for consistent quality and industry-standard transistor solutions. This product line is engineered to meet stringent reliability and performance criteria demanded by industrial and commercial electronics. By adhering to rigorous process controls and testing, the brand ensures that each transistor performs predictably in diverse applications, making it a trusted choice for engineers and sourcing professionals focused on durable, high-quality components.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current for this transistor is 600 milliamps. Operating within this limit ensures safe and reliable transistor performance without risking thermal or electrical damage.

Can this transistor be used for high-frequency switching applications?

Yes, with a transition frequency of approximately 300 MHz, this device supports high-frequency switching in various signal processing and driver circuits, enabling efficient high-speed operation.

What packaging does this transistor come in, and how does it affect integration?

It is supplied in a SOT-23 surface-mount package. This compact form factor facilitates integration into space-constrained PCB layouts while maintaining sufficient thermal dissipation properties suitable for low to moderate power applications.

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产品中间询盘

Is this transistor suitable for general-purpose amplification?

Absolutely. Its stable DC current gain range and voltage ratings make it ideal for a wide range of general-purpose amplification tasks in both analog and mixed-signal circuits.

What are the voltage limits for the collector-emitter and collector-base junctions?

The transistor supports a maximum collector-emitter voltage of 40 volts and a collector-base voltage of up to 75 volts, allowing for flexible use in circuits with moderate voltage requirements.

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