JANSH2N2222A-Transistor NPN Amplifier – TO-18 Metal Can Package by JAN Semiconductor

  • This transistor amplifies electrical signals, enabling enhanced control in electronic circuits.
  • Its voltage rating supports stable operation under typical power conditions, ensuring consistent performance.
  • The compact package design allows efficient use of board space in dense circuit layouts.
  • Ideal for switching applications in low-power devices, it helps manage current flow effectively.
  • Manufactured to meet standard quality criteria, it ensures dependable operation over time.
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JANSH2N2222A-Transistor Overview

The JANSH2N2222A-Transistor is a widely used NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. With a maximum collector current of 800mA and a collector-emitter voltage rating of 40V, it offers robust performance in low to medium power circuits. This transistor features fast switching speeds and a high gain bandwidth product, making it suitable for high-frequency operations. Its TO-18 metal can package ensures reliable thermal management and durability under industrial conditions. Engineers and sourcing specialists rely on this device for its consistent electrical characteristics and broad compatibility. For more detailed specifications and sourcing, visit IC Manufacturer.

JANSH2N2222A-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 800 mA
Power Dissipation (Ptot) 625 mW
Transition Frequency (fT) 300 MHz
DC Current Gain (hFE) 100?C300 Typical
Junction Temperature (TJ) 150 ??C

JANSH2N2222A-Transistor Key Features

  • High collector current capacity: Supports up to 800mA, enabling use in moderate power amplification and switching tasks.
  • Fast switching speed: Transition frequency of 300MHz allows efficient operation in high-frequency circuits such as RF amplifiers.
  • Robust voltage ratings: Withstands up to 40V collector-emitter voltage, providing reliable performance in a wide range of circuit conditions.
  • Durable TO-18 metal can package: Offers enhanced thermal dissipation and mechanical stability for industrial environments.

Typical Applications

  • Signal amplification in audio and RF circuits, where moderate power gain and frequency response are critical for performance.
  • Switching devices in relay drivers, LED drivers, and low-power motor control applications requiring reliable switching characteristics.
  • General-purpose amplification in sensor interface circuits and instrumentation electronics for industrial control systems.
  • Buffer stages in communication equipment, facilitating impedance matching and signal conditioning.

JANSH2N2222A-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of high collector current, fast switching speed, and robust voltage tolerance, outperforming many generic BJTs in similar applications. Its TO-18 packaging enhances thermal reliability compared to plastic encapsulated alternatives. The device??s consistent DC gain and frequency response enable precision amplification and switching, making it a preferred choice for engineers seeking dependable performance in industrial and commercial circuits.

JANSH2N2222A-Transistor Brand Info

The JANSH2N2222A-Transistor is manufactured under the JAN standard, indicating military-grade quality and stringent reliability testing. This product adheres to strict JEDEC compliance, ensuring compatibility and quality consistency. The 2N2222A transistor is a classic semiconductor device widely produced by multiple reputable manufacturers, known for its proven performance in diverse electronic systems. Its provenance underscores its suitability for demanding environments where long-term stability and durability are essential.

FAQ

What is the maximum voltage rating for the JANSH2N2222A transistor?

The maximum collector-emitter voltage (VCEO)

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